GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

S. J. Chang; M. L. Lee; J. K. Sheu; W. C. Lai; Y. K. Su; C. S. Chang; C. J. Kao; G. C. Chi; J. M. Tsai

doi:10.1109/LED.2003.812147

GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

S. J. Chang, M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, C. S. Chang, C. J. Kao, G. C. Chi, J. M. Tsai

Research output: Contribution to journal › Letter › peer-review

94 Citations (Scopus)

Abstract

Nitride-based metal-semiconductor-metal (MSM) photodetectors (PDs) with low-temperature (LT) gallium nitride (GaN) cap layers and indium-tin-oxide (1TO) metal contacts were successfully fabricated. It was found that we could achieve three orders of magnitude smaller dark current by the introduction of the LT-GaN layer. For the PDs with LT-GaN cap layers, the maximum responsivity at 350 nm was found to be 0.1 and 0.9 A/W when the device was biased at 1 and 5 V, respectively. Operation speed of PDs with LT-GaN cap layers was also found to be faster than that of conventional PDs without LT-GaN cap layers.

Original language	English
Pages (from-to)	212-214
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	24
Issue number	4
DOIs	https://doi.org/10.1109/LED.2003.812147
Publication status	Published - 2003 Apr

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2003.812147

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@article{54020bf4fe9146639fe3eaddc900953a,

title = "GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts",

abstract = "Nitride-based metal-semiconductor-metal (MSM) photodetectors (PDs) with low-temperature (LT) gallium nitride (GaN) cap layers and indium-tin-oxide (1TO) metal contacts were successfully fabricated. It was found that we could achieve three orders of magnitude smaller dark current by the introduction of the LT-GaN layer. For the PDs with LT-GaN cap layers, the maximum responsivity at 350 nm was found to be 0.1 and 0.9 A/W when the device was biased at 1 and 5 V, respectively. Operation speed of PDs with LT-GaN cap layers was also found to be faster than that of conventional PDs without LT-GaN cap layers.",

author = "Chang, {S. J.} and Lee, {M. L.} and Sheu, {J. K.} and Lai, {W. C.} and Su, {Y. K.} and Chang, {C. S.} and Kao, {C. J.} and Chi, {G. C.} and Tsai, {J. M.}",

note = "Funding Information: Manuscript received January 6, 2003; revised February 28, 2003. This work was supported by the National Science Council of Taiwan, R.O.C., under Grants NSC 90-2215-E-008-043 and NSC 90-2112-M-008-046. The review of this letter was arranged by Editor D. Ritter.",

year = "2003",

month = apr,

doi = "10.1109/LED.2003.812147",

language = "English",

volume = "24",

pages = "212--214",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

AU - Chang, S. J.

AU - Lee, M. L.

AU - Sheu, J. K.

AU - Lai, W. C.

AU - Su, Y. K.

AU - Chang, C. S.

AU - Kao, C. J.

AU - Chi, G. C.

AU - Tsai, J. M.

N1 - Funding Information: Manuscript received January 6, 2003; revised February 28, 2003. This work was supported by the National Science Council of Taiwan, R.O.C., under Grants NSC 90-2215-E-008-043 and NSC 90-2112-M-008-046. The review of this letter was arranged by Editor D. Ritter.

PY - 2003/4

Y1 - 2003/4

N2 - Nitride-based metal-semiconductor-metal (MSM) photodetectors (PDs) with low-temperature (LT) gallium nitride (GaN) cap layers and indium-tin-oxide (1TO) metal contacts were successfully fabricated. It was found that we could achieve three orders of magnitude smaller dark current by the introduction of the LT-GaN layer. For the PDs with LT-GaN cap layers, the maximum responsivity at 350 nm was found to be 0.1 and 0.9 A/W when the device was biased at 1 and 5 V, respectively. Operation speed of PDs with LT-GaN cap layers was also found to be faster than that of conventional PDs without LT-GaN cap layers.

AB - Nitride-based metal-semiconductor-metal (MSM) photodetectors (PDs) with low-temperature (LT) gallium nitride (GaN) cap layers and indium-tin-oxide (1TO) metal contacts were successfully fabricated. It was found that we could achieve three orders of magnitude smaller dark current by the introduction of the LT-GaN layer. For the PDs with LT-GaN cap layers, the maximum responsivity at 350 nm was found to be 0.1 and 0.9 A/W when the device was biased at 1 and 5 V, respectively. Operation speed of PDs with LT-GaN cap layers was also found to be faster than that of conventional PDs without LT-GaN cap layers.

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U2 - 10.1109/LED.2003.812147

DO - 10.1109/LED.2003.812147

M3 - Letter

AN - SCOPUS:0038443548

SN - 0741-3106

VL - 24

SP - 212

EP - 214

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

ER -

GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

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