GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

S. J. Chang, M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, C. S. Chang, C. J. Kao, G. C. Chi, J. M. Tsai

Research output: Contribution to journalLetter

87 Citations (Scopus)

Abstract

Nitride-based metal-semiconductor-metal (MSM) photodetectors (PDs) with low-temperature (LT) gallium nitride (GaN) cap layers and indium-tin-oxide (1TO) metal contacts were successfully fabricated. It was found that we could achieve three orders of magnitude smaller dark current by the introduction of the LT-GaN layer. For the PDs with LT-GaN cap layers, the maximum responsivity at 350 nm was found to be 0.1 and 0.9 A/W when the device was biased at 1 and 5 V, respectively. Operation speed of PDs with LT-GaN cap layers was also found to be faster than that of conventional PDs without LT-GaN cap layers.

Original languageEnglish
Pages (from-to)212-214
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number4
DOIs
Publication statusPublished - 2003 Apr 1

Fingerprint

Gallium nitride
Photodetectors
Metals
Semiconductor materials
Temperature
Dark currents
Tin oxides
Nitrides
Indium
gallium nitride

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Chang, S. J. ; Lee, M. L. ; Sheu, J. K. ; Lai, W. C. ; Su, Y. K. ; Chang, C. S. ; Kao, C. J. ; Chi, G. C. ; Tsai, J. M. / GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts. In: IEEE Electron Device Letters. 2003 ; Vol. 24, No. 4. pp. 212-214.
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abstract = "Nitride-based metal-semiconductor-metal (MSM) photodetectors (PDs) with low-temperature (LT) gallium nitride (GaN) cap layers and indium-tin-oxide (1TO) metal contacts were successfully fabricated. It was found that we could achieve three orders of magnitude smaller dark current by the introduction of the LT-GaN layer. For the PDs with LT-GaN cap layers, the maximum responsivity at 350 nm was found to be 0.1 and 0.9 A/W when the device was biased at 1 and 5 V, respectively. Operation speed of PDs with LT-GaN cap layers was also found to be faster than that of conventional PDs without LT-GaN cap layers.",
author = "Chang, {S. J.} and Lee, {M. L.} and Sheu, {J. K.} and Lai, {W. C.} and Su, {Y. K.} and Chang, {C. S.} and Kao, {C. J.} and Chi, {G. C.} and Tsai, {J. M.}",
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GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts. / Chang, S. J.; Lee, M. L.; Sheu, J. K.; Lai, W. C.; Su, Y. K.; Chang, C. S.; Kao, C. J.; Chi, G. C.; Tsai, J. M.

In: IEEE Electron Device Letters, Vol. 24, No. 4, 01.04.2003, p. 212-214.

Research output: Contribution to journalLetter

TY - JOUR

T1 - GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

AU - Chang, S. J.

AU - Lee, M. L.

AU - Sheu, J. K.

AU - Lai, W. C.

AU - Su, Y. K.

AU - Chang, C. S.

AU - Kao, C. J.

AU - Chi, G. C.

AU - Tsai, J. M.

PY - 2003/4/1

Y1 - 2003/4/1

N2 - Nitride-based metal-semiconductor-metal (MSM) photodetectors (PDs) with low-temperature (LT) gallium nitride (GaN) cap layers and indium-tin-oxide (1TO) metal contacts were successfully fabricated. It was found that we could achieve three orders of magnitude smaller dark current by the introduction of the LT-GaN layer. For the PDs with LT-GaN cap layers, the maximum responsivity at 350 nm was found to be 0.1 and 0.9 A/W when the device was biased at 1 and 5 V, respectively. Operation speed of PDs with LT-GaN cap layers was also found to be faster than that of conventional PDs without LT-GaN cap layers.

AB - Nitride-based metal-semiconductor-metal (MSM) photodetectors (PDs) with low-temperature (LT) gallium nitride (GaN) cap layers and indium-tin-oxide (1TO) metal contacts were successfully fabricated. It was found that we could achieve three orders of magnitude smaller dark current by the introduction of the LT-GaN layer. For the PDs with LT-GaN cap layers, the maximum responsivity at 350 nm was found to be 0.1 and 0.9 A/W when the device was biased at 1 and 5 V, respectively. Operation speed of PDs with LT-GaN cap layers was also found to be faster than that of conventional PDs without LT-GaN cap layers.

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U2 - 10.1109/LED.2003.812147

DO - 10.1109/LED.2003.812147

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EP - 214

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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