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GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts
S. J. Chang
, M. L. Lee
,
J. K. Sheu
,
W. C. Lai
, Y. K. Su
, C. S. Chang
, C. J. Kao
, G. C. Chi
, J. M. Tsai
Institute of Microelectronics
Department of Photonics
Research output
:
Contribution to journal
›
Letter
›
peer-review
95
Citations (Scopus)
Overview
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Keyphrases
Gallium Nitride
100%
Low Temperature
100%
Capping Layer
100%
Metal-semiconductor-metal Photodetector
100%
Metal Contact
100%
Photodetector
42%
Responsivity
14%
Nitrides
14%
Dark Current
14%
Order of Magnitude
14%
Three-order
14%
Indium Tin Oxide
14%
Nitrided Layer
14%
Operation Speed
14%
Engineering
Nitride
100%
Photometer
100%
Low-Temperature
100%
Cap Layer
100%
Metal Contact
100%
Speed Operation
14%
Responsivity
14%
Indium-Tin-Oxide
14%
Nitride Layer
14%
Material Science
Photosensor
100%
Gallium Nitride
100%
Indium Tin Oxide
100%
Nitride Compound
14%
Chemical Engineering
Gallium Nitride
100%
Nitride
14%
Indium
14%
Tin Oxide
14%