GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors with IrPt Contact Electrodes

C. L. Yu, C. H. Chen, S. J. Chang, P. C. Chang

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Nitride-based ultraviolet metal-semiconductor-metal photodetectors with IrPt and NiAu Schottky electrodes were fabricated. It was found that room-temperature effective Schottky barrier height was 0.79 eV for IrPt on GaN. It was also found that we could achieve a 60 times smaller dark current and a 20 times larger photocurrent to dark current contrast ratio by using IrPt contact electrodes. With a 5 V applied bias and an incident light wavelength of 350 nm, it was found that measured responsivity was 0.132 AW for the detector with IrPt contact electrodes.

Original languageEnglish
Pages (from-to)J71-J72
JournalJournal of the Electrochemical Society
Volume154
Issue number2
DOIs
Publication statusPublished - 2007 Jan 19

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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