Nitride-based ultraviolet metal-semiconductor-metal photodetectors with IrPt and NiAu Schottky electrodes were fabricated. It was found that room-temperature effective Schottky barrier height was 0.79 eV for IrPt on GaN. It was also found that we could achieve a 60 times smaller dark current and a 20 times larger photocurrent to dark current contrast ratio by using IrPt contact electrodes. With a 5 V applied bias and an incident light wavelength of 350 nm, it was found that measured responsivity was 0.132 AW for the detector with IrPt contact electrodes.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry