GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors with IrPt Contact Electrodes

Keyphrases

• UV Photodetector 100%
• Metal-semiconductor-metal 100%
• Contact Electrodes 100%
• Dark Current 66%
• Room Temperature 33%
• Applied Bias 33%
• Responsivity 33%
• Nitrides 33%
• Photocurrent 33%
• Contrast Ratio 33%
• Metal-semiconductor-metal Photodetector 33%
• Incident Light 33%
• Light Wavelength 33%
• Effective Schottky Barrier Height 33%
• Schottky Electrode 33%

Engineering

• Photometer 100%
• Electrode Contact 100%
• Nitride 33%
• Room Temperature 33%
• Responsivity 33%
• Schottky Barrier 33%
• Photocurrent 33%
• Barrier Height 33%
• Contrast Ratio 33%
• Light Incident 33%

Material Science

• Photosensor 100%
• Schottky Barrier 50%
• Nitride Compound 50%