GaN metal-Semiconductor-Metal ultraviolet photodetectors with transparent indium-tin-oxide schottky contacts

C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. Y. Chi, C. A. Chang, J. K. Sheu, J. F. Chen

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145 Citations (Scopus)

Abstract

Indium-tin-oxide (ITO) layers were deposited onto n-GaN films and/or glass substrates by electron-beam evaporation. With proper annealing, we found that we could improve the optical properties of the ITO layers and achieve a maximum transmittance of 98% at 360 nm. GaN-based metal-semiconductor-metal (MSM) photodetectors with ITO transparent contacts were also fabricated. A maximum 0.12-A photocurrent with a photo current to dark current contrast higher than five orders of magnitude during ultraviolet irradiation were obtained for a photodetector annealed at 600 °C. We also found that the maximum photo responsivity at 345 nm is 7.2 and 0.9 A/W when the detector is biased at 5 and 0.5 V, respectively.

Original languageEnglish
Pages (from-to)848-850
Number of pages3
JournalIEEE Photonics Technology Letters
Volume13
Issue number8
DOIs
Publication statusPublished - 2001 Aug

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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