GaN MIS capacitors with photo-CVD SiNxOy insulating layers

S. J. Chang; C. K. Wang; Y. K. Su; C. S. Chang; T. K. Lin; T. K. Ko; H. L. Liu

doi:10.1149/1.1896308

GaN MIS capacitors with photo-CVD SiN_xO_y insulating layers

S. J. Chang, C. K. Wang, Y. K. Su, C. S. Chang, T. K. Lin, T. K. Ko, H. L. Liu

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We report the deposition of high-quality SiO₂ and SiN _xO_y layers onto GaN/sapphire templates by photochemical vapor deposition (photo-CVD). It was found that the 0.845 nm root-mean-square roughness observed from the photo-CVD SiN_xO_y layer was much smaller than that observed from photo-CVD SiO₂ layer with the same thickness. GaN metal-insulator-semiconductor (MIS) capacitors with these insulating layers were also fabricated. With an applied electric field of 4 MV/cm, it was found that the leakage current densities were 1 × 10 ^-8 and 6 × 10^-7 A/cm² for the capacitors with photo-CVD SiN_xO_y and photo-CVD SiO₂ insulating layers, respectively. It was also found that the breakdown field of the capacitors with photo-CVD SiN_xO_y could reach 13 MV/cm. The interface state density at the SiN_xO_y/GaN interface was also found to be reasonably low.

Original language	English
Pages (from-to)	G423-G426
Journal	Journal of the Electrochemical Society
Volume	152
Issue number	6
DOIs	https://doi.org/10.1149/1.1896308
Publication status	Published - 2005 Aug 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.1896308

Cite this

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title = "GaN MIS capacitors with photo-CVD SiNxOy insulating layers",

abstract = "We report the deposition of high-quality SiO2 and SiN xOy layers onto GaN/sapphire templates by photochemical vapor deposition (photo-CVD). It was found that the 0.845 nm root-mean-square roughness observed from the photo-CVD SiNxOy layer was much smaller than that observed from photo-CVD SiO2 layer with the same thickness. GaN metal-insulator-semiconductor (MIS) capacitors with these insulating layers were also fabricated. With an applied electric field of 4 MV/cm, it was found that the leakage current densities were 1 × 10 -8 and 6 × 10-7 A/cm2 for the capacitors with photo-CVD SiNxOy and photo-CVD SiO2 insulating layers, respectively. It was also found that the breakdown field of the capacitors with photo-CVD SiNxOy could reach 13 MV/cm. The interface state density at the SiNxOy/GaN interface was also found to be reasonably low.",

author = "Chang, {S. J.} and Wang, {C. K.} and Su, {Y. K.} and Chang, {C. S.} and Lin, {T. K.} and Ko, {T. K.} and Liu, {H. L.}",

year = "2005",

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T1 - GaN MIS capacitors with photo-CVD SiNxOy insulating layers

AU - Chang, S. J.

AU - Wang, C. K.

AU - Su, Y. K.

AU - Chang, C. S.

AU - Lin, T. K.

AU - Ko, T. K.

AU - Liu, H. L.

PY - 2005/8/1

Y1 - 2005/8/1

N2 - We report the deposition of high-quality SiO2 and SiN xOy layers onto GaN/sapphire templates by photochemical vapor deposition (photo-CVD). It was found that the 0.845 nm root-mean-square roughness observed from the photo-CVD SiNxOy layer was much smaller than that observed from photo-CVD SiO2 layer with the same thickness. GaN metal-insulator-semiconductor (MIS) capacitors with these insulating layers were also fabricated. With an applied electric field of 4 MV/cm, it was found that the leakage current densities were 1 × 10 -8 and 6 × 10-7 A/cm2 for the capacitors with photo-CVD SiNxOy and photo-CVD SiO2 insulating layers, respectively. It was also found that the breakdown field of the capacitors with photo-CVD SiNxOy could reach 13 MV/cm. The interface state density at the SiNxOy/GaN interface was also found to be reasonably low.

AB - We report the deposition of high-quality SiO2 and SiN xOy layers onto GaN/sapphire templates by photochemical vapor deposition (photo-CVD). It was found that the 0.845 nm root-mean-square roughness observed from the photo-CVD SiNxOy layer was much smaller than that observed from photo-CVD SiO2 layer with the same thickness. GaN metal-insulator-semiconductor (MIS) capacitors with these insulating layers were also fabricated. With an applied electric field of 4 MV/cm, it was found that the leakage current densities were 1 × 10 -8 and 6 × 10-7 A/cm2 for the capacitors with photo-CVD SiNxOy and photo-CVD SiO2 insulating layers, respectively. It was also found that the breakdown field of the capacitors with photo-CVD SiNxOy could reach 13 MV/cm. The interface state density at the SiNxOy/GaN interface was also found to be reasonably low.

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