GaN MIS capacitors with photo-CVD SiNxOy insulating layers

S. J. Chang, C. K. Wang, Y. K. Su, C. S. Chang, T. K. Lin, T. K. Ko, H. L. Liu

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12 Citations (Scopus)


We report the deposition of high-quality SiO2 and SiN xOy layers onto GaN/sapphire templates by photochemical vapor deposition (photo-CVD). It was found that the 0.845 nm root-mean-square roughness observed from the photo-CVD SiNxOy layer was much smaller than that observed from photo-CVD SiO2 layer with the same thickness. GaN metal-insulator-semiconductor (MIS) capacitors with these insulating layers were also fabricated. With an applied electric field of 4 MV/cm, it was found that the leakage current densities were 1 × 10 -8 and 6 × 10-7 A/cm2 for the capacitors with photo-CVD SiNxOy and photo-CVD SiO2 insulating layers, respectively. It was also found that the breakdown field of the capacitors with photo-CVD SiNxOy could reach 13 MV/cm. The interface state density at the SiNxOy/GaN interface was also found to be reasonably low.

Original languageEnglish
Pages (from-to)G423-G426
JournalJournal of the Electrochemical Society
Issue number6
Publication statusPublished - 2005 Aug 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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