TY - JOUR
T1 - GaN MOS device using SiO2-Ga2O3 insulator grown by photoelectrochemical oxidation method
AU - Lee, Ching Ting
AU - Lee, Hsin Ying
AU - Chen, Hong Wei
N1 - Funding Information:
Manuscript received October 11, 2002; revised November 25, 2002. This work was supported by the National Science Council of Taiwan, R.O.C., under Grant NSC91-2215-E008-016. The review of this letter was arranged by Editor D. Ritter. The authors are with the Institute of Optical Sciences, National Central University, Chung-Li 32054, Taiwan, R.O.C. (e-mail: [email protected]). Digital Object Identifier 10.1109/LED.2002.807711
PY - 2003/2
Y1 - 2003/2
N2 - We report on a SiO2-Ga2O3 gate insulator stack directly grown on n-type GaN by the photoelectrochemical oxidation method. The resultant MOS devices are fabricated using the standard photolithography technique and liftoff technique. The effect of annealing temperature on the SiO2-Ga2O3/n-type GaN MOS devices are investigated. The properties of high breakdown field, low gate leakage current, and low interface state density were obtained for the MOS devices.
AB - We report on a SiO2-Ga2O3 gate insulator stack directly grown on n-type GaN by the photoelectrochemical oxidation method. The resultant MOS devices are fabricated using the standard photolithography technique and liftoff technique. The effect of annealing temperature on the SiO2-Ga2O3/n-type GaN MOS devices are investigated. The properties of high breakdown field, low gate leakage current, and low interface state density were obtained for the MOS devices.
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U2 - 10.1109/LED.2002.807711
DO - 10.1109/LED.2002.807711
M3 - Article
AN - SCOPUS:0037718416
SN - 0741-3106
VL - 24
SP - 54
EP - 56
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 2
ER -