GaN MOSFET with liquid phase deposited oxide gate

Kuan Wei Lee; Dei Wei Chou; Hou Run Wu; Jian Jun Huang; Yeong Her Wang; Mau Phon Houng; Sou Jinn Chang; Yan Kuin Su

doi:10.1049/el:20020543

GaN MOSFET with liquid phase deposited oxide gate

Kuan Wei Lee, Dei Wei Chou, Hou Run Wu, Jian Jun Huang, Yeong Her Wang, Mau Phon Houng, Sou Jinn Chang, Yan Kuin Su

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Liquid phase deposited SiO₂ as the insulating gate on an n-channel depletion mode GaN MOSFET is demonstrated. For a device with a 13 μm source-to-drain distance and gate metal of 8 × 40 μm², a transconductance of 48 m/S/mm and a drain current of 250 mA/mm at V_gs=4 V and V_ds=20 V can be achieved.

Original language	English
Pages (from-to)	829-830
Number of pages	2
Journal	Electronics Letters
Volume	38
Issue number	15
DOIs	https://doi.org/10.1049/el:20020543
Publication status	Published - 2002 Jul 18

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20020543

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title = "GaN MOSFET with liquid phase deposited oxide gate",

abstract = "Liquid phase deposited SiO2 as the insulating gate on an n-channel depletion mode GaN MOSFET is demonstrated. For a device with a 13 μm source-to-drain distance and gate metal of 8 × 40 μm2, a transconductance of 48 m/S/mm and a drain current of 250 mA/mm at Vgs=4 V and Vds=20 V can be achieved.",

author = "Lee, {Kuan Wei} and Chou, {Dei Wei} and Wu, {Hou Run} and Huang, {Jian Jun} and Wang, {Yeong Her} and Houng, {Mau Phon} and Chang, {Sou Jinn} and Su, {Yan Kuin}",

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TY - JOUR

T1 - GaN MOSFET with liquid phase deposited oxide gate

AU - Lee, Kuan Wei

AU - Chou, Dei Wei

AU - Wu, Hou Run

AU - Huang, Jian Jun

AU - Wang, Yeong Her

AU - Houng, Mau Phon

AU - Chang, Sou Jinn

AU - Su, Yan Kuin

PY - 2002/7/18

Y1 - 2002/7/18

N2 - Liquid phase deposited SiO2 as the insulating gate on an n-channel depletion mode GaN MOSFET is demonstrated. For a device with a 13 μm source-to-drain distance and gate metal of 8 × 40 μm2, a transconductance of 48 m/S/mm and a drain current of 250 mA/mm at Vgs=4 V and Vds=20 V can be achieved.

AB - Liquid phase deposited SiO2 as the insulating gate on an n-channel depletion mode GaN MOSFET is demonstrated. For a device with a 13 μm source-to-drain distance and gate metal of 8 × 40 μm2, a transconductance of 48 m/S/mm and a drain current of 250 mA/mm at Vgs=4 V and Vds=20 V can be achieved.

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U2 - 10.1049/el:20020543

DO - 10.1049/el:20020543

M3 - Article

AN - SCOPUS:0037130430

SN - 0013-5194

VL - 38

SP - 829

EP - 830

JO - Electronics Letters

JF - Electronics Letters

IS - 15

ER -

GaN MOSFET with liquid phase deposited oxide gate

Abstract

All Science Journal Classification (ASJC) codes

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