GaN MSM photodetectors with a semi-insulating alinn cap layer and sputtered ITO transparent electrodes

W. Y. Weng, R. W. Chuang, S. J. Chang, W. C. Lai, T. J. Hsueh, S. C. Shei, X. F. Zeng, S. L. Wu

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1 Citation (Scopus)

Abstract

We propose a way to enhance the performance of the GaN-based UV metal-semiconductor-metal (MSM) photodetectors by jointly incorporating a semi-insulating AlInN cap layer with a sputtered indium tin oxide (ITO) electrode. The results show that a dark current as low as 1.49× 10-8 A/ cm2 can be achieved via the insertion of highly resistive AlInN cap layers. A UV-to-visible rejection ratio as high as 28,306 with a 5 V applied bias can also be realized with this design. Furthermore, a much reduced noise-equivalent power of 2.85× 10-14 W and a rather high normalized detectivity of 2.15× 1013 cm Hz0.5 W-1 are also realized when the ITO electrode is used.

Original languageEnglish
Pages (from-to)H369-H372
JournalElectrochemical and Solid-State Letters
Volume12
Issue number10
DOIs
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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