GaN MSM photodetectors with a semi-insulating alinn cap layer and sputtered ITO transparent electrodes

W. Y. Weng; R. W. Chuang; S. J. Chang; W. C. Lai; T. J. Hsueh; S. C. Shei; X. F. Zeng; S. L. Wu

doi:10.1149/1.3182832

GaN MSM photodetectors with a semi-insulating alinn cap layer and sputtered ITO transparent electrodes

W. Y. Weng, R. W. Chuang, S. J. Chang, W. C. Lai, T. J. Hsueh, S. C. Shei, X. F. Zeng, S. L. Wu

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Abstract

We propose a way to enhance the performance of the GaN-based UV metal-semiconductor-metal (MSM) photodetectors by jointly incorporating a semi-insulating AlInN cap layer with a sputtered indium tin oxide (ITO) electrode. The results show that a dark current as low as 1.49× 10-8 A/ cm₂ can be achieved via the insertion of highly resistive AlInN cap layers. A UV-to-visible rejection ratio as high as 28,306 with a 5 V applied bias can also be realized with this design. Furthermore, a much reduced noise-equivalent power of 2.85× 10-14 W and a rather high normalized detectivity of 2.15× 1013 cm Hz0.5 W-1 are also realized when the ITO electrode is used.

Original language	English
Pages (from-to)	H369-H372
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	10
DOIs	https://doi.org/10.1149/1.3182832
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "GaN MSM photodetectors with a semi-insulating alinn cap layer and sputtered ITO transparent electrodes",

abstract = "We propose a way to enhance the performance of the GaN-based UV metal-semiconductor-metal (MSM) photodetectors by jointly incorporating a semi-insulating AlInN cap layer with a sputtered indium tin oxide (ITO) electrode. The results show that a dark current as low as 1.49× 10-8 A/ cm2 can be achieved via the insertion of highly resistive AlInN cap layers. A UV-to-visible rejection ratio as high as 28,306 with a 5 V applied bias can also be realized with this design. Furthermore, a much reduced noise-equivalent power of 2.85× 10-14 W and a rather high normalized detectivity of 2.15× 1013 cm Hz0.5 W-1 are also realized when the ITO electrode is used.",

author = "Weng, {W. Y.} and Chuang, {R. W.} and Chang, {S. J.} and Lai, {W. C.} and Hsueh, {T. J.} and Shei, {S. C.} and Zeng, {X. F.} and Wu, {S. L.}",

year = "2009",

doi = "10.1149/1.3182832",

language = "English",

volume = "12",

pages = "H369--H372",

journal = "Electrochemical and Solid-State Letters",

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publisher = "Electrochemical Society, Inc.",

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TY - JOUR

T1 - GaN MSM photodetectors with a semi-insulating alinn cap layer and sputtered ITO transparent electrodes

AU - Weng, W. Y.

AU - Chuang, R. W.

AU - Chang, S. J.

AU - Lai, W. C.

AU - Hsueh, T. J.

AU - Shei, S. C.

AU - Zeng, X. F.

AU - Wu, S. L.

PY - 2009

Y1 - 2009

N2 - We propose a way to enhance the performance of the GaN-based UV metal-semiconductor-metal (MSM) photodetectors by jointly incorporating a semi-insulating AlInN cap layer with a sputtered indium tin oxide (ITO) electrode. The results show that a dark current as low as 1.49× 10-8 A/ cm2 can be achieved via the insertion of highly resistive AlInN cap layers. A UV-to-visible rejection ratio as high as 28,306 with a 5 V applied bias can also be realized with this design. Furthermore, a much reduced noise-equivalent power of 2.85× 10-14 W and a rather high normalized detectivity of 2.15× 1013 cm Hz0.5 W-1 are also realized when the ITO electrode is used.

AB - We propose a way to enhance the performance of the GaN-based UV metal-semiconductor-metal (MSM) photodetectors by jointly incorporating a semi-insulating AlInN cap layer with a sputtered indium tin oxide (ITO) electrode. The results show that a dark current as low as 1.49× 10-8 A/ cm2 can be achieved via the insertion of highly resistive AlInN cap layers. A UV-to-visible rejection ratio as high as 28,306 with a 5 V applied bias can also be realized with this design. Furthermore, a much reduced noise-equivalent power of 2.85× 10-14 W and a rather high normalized detectivity of 2.15× 1013 cm Hz0.5 W-1 are also realized when the ITO electrode is used.

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JF - Electrochemical and Solid-State Letters

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ER -

GaN MSM photodetectors with a semi-insulating alinn cap layer and sputtered ITO transparent electrodes

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All Science Journal Classification (ASJC) codes

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