GaN MSM photodetectors with a semi-insulating Mg-doped AlInN cap layer

W. Y. Weng, S. J. Chang, W. C. Lai, T. J. Hsueh, S. C. Shei, X. F. Zeng, S. L. Wu, S. C. Hung

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We report the fabrication of GaN-based ultraviolet (UV) metal-semiconductor-metal photodetectors with a semi-insulating AlInN cap layer. It was found that we can achieve a smaller dark leakage current, a larger UV-to-visible rejection ratio, a smaller noise level, and a larger detectivity while maintaining the sharp transition by inserting the semi-insulating AlInN cap layer.

Original languageEnglish
Pages (from-to)504-506
Number of pages3
JournalIEEE Photonics Technology Letters
Volume21
Issue number8
DOIs
Publication statusPublished - 2009 Apr 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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