GaN MSM photodetectors with photo-CVD annealed Ni/Au electrodes

Y. D. Jhou, C. H. Chen, S. J. Chang, Y. K. Su, P. C. Chang, P. C. Chen, H. Hung, C. L. Yu, S. M. Wang, M. H. Wu

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Thin Ni/Au (3/6 nm) bi-layer metal films annealed by photo-chemical vapor deposition (photo-CVD) were investigated. With proper annealing in oxygen by the photo-CVD systems, it was found that the transmittance of the deposited Ni/Au increased from 67 to 85% in the region between 350 and 450 nm. GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with photo-CVD annealed Ni/Au contact electrodes were also fabricated. It was found that dark current of the detector became significantly smaller after annealing. With a 1 V applied bias, it was found that we can achieve a photocurrent to dark current contrast ratio of 2.54×103 from the photodetectors with 600 °C photo-CVD annealed Ni/Au contacts.

Original languageEnglish
Pages (from-to)328-331
Number of pages4
JournalMicroelectronics Journal
Volume37
Issue number4
DOIs
Publication statusPublished - 2006 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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