GaN MSM photodetectors with TiW transparent electrodes

C. K. Wang, S. J. Chang, Y. K. Su, C. S. Chang, Y. Z. Chiou, C. H. Kuo, T. K. Lin, T. K. Ko, J. J. Tang

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)

Abstract

TiW films were deposited onto glass substrates and GaN epitaxial layers by RF magnetron sputtering. It was found that TiW film deposited with a 300 W RF power could provide us a high transmittance and a low resistivity. GaN-based ultraviolet metal-semiconductor-metal (MSM) photodetectors were also fabricated. It was found that photocurrent to dark current contrast ratios were 4.35, 4.6 × 102 and 5.7 × 104 for the pholodetectors with ITO, TiN, and TiW electrodes, respectively. The large photocurrent to dark current contrast ratio could be attributed mainly to the fact that TiW can form a high Schottky barrier height on the surface of u-GaN epitaxial layers.

Original languageEnglish
Pages (from-to)25-29
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume112
Issue number1
DOIs
Publication statusPublished - 2004 Sep 15

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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