GaN MSM photodetectors with TiW transparent electrodes

C. K. Wang; S. J. Chang; Y. K. Su; C. S. Chang; Y. Z. Chiou; C. H. Kuo; T. K. Lin; T. K. Ko; J. J. Tang

doi:10.1016/j.mseb.2004.05.002

GaN MSM photodetectors with TiW transparent electrodes

C. K. Wang, S. J. Chang, Y. K. Su, C. S. Chang, Y. Z. Chiou, C. H. Kuo, T. K. Lin, T. K. Ko, J. J. Tang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

TiW films were deposited onto glass substrates and GaN epitaxial layers by RF magnetron sputtering. It was found that TiW film deposited with a 300 W RF power could provide us a high transmittance and a low resistivity. GaN-based ultraviolet metal-semiconductor-metal (MSM) photodetectors were also fabricated. It was found that photocurrent to dark current contrast ratios were 4.35, 4.6 × 10² and 5.7 × 10⁴ for the pholodetectors with ITO, TiN, and TiW electrodes, respectively. The large photocurrent to dark current contrast ratio could be attributed mainly to the fact that TiW can form a high Schottky barrier height on the surface of u-GaN epitaxial layers.

Original language	English
Pages (from-to)	25-29
Number of pages	5
Journal	Materials Science and Engineering: B
Volume	112
Issue number	1
DOIs	https://doi.org/10.1016/j.mseb.2004.05.002
Publication status	Published - 2004 Sept 15

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2004.05.002

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title = "GaN MSM photodetectors with TiW transparent electrodes",

abstract = "TiW films were deposited onto glass substrates and GaN epitaxial layers by RF magnetron sputtering. It was found that TiW film deposited with a 300 W RF power could provide us a high transmittance and a low resistivity. GaN-based ultraviolet metal-semiconductor-metal (MSM) photodetectors were also fabricated. It was found that photocurrent to dark current contrast ratios were 4.35, 4.6 × 102 and 5.7 × 104 for the pholodetectors with ITO, TiN, and TiW electrodes, respectively. The large photocurrent to dark current contrast ratio could be attributed mainly to the fact that TiW can form a high Schottky barrier height on the surface of u-GaN epitaxial layers.",

author = "Wang, {C. K.} and Chang, {S. J.} and Su, {Y. K.} and Chang, {C. S.} and Chiou, {Y. Z.} and Kuo, {C. H.} and Lin, {T. K.} and Ko, {T. K.} and Tang, {J. J.}",

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doi = "10.1016/j.mseb.2004.05.002",

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journal = "Materials Science and Engineering: B",

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T1 - GaN MSM photodetectors with TiW transparent electrodes

AU - Wang, C. K.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Chang, C. S.

AU - Chiou, Y. Z.

AU - Kuo, C. H.

AU - Lin, T. K.

AU - Ko, T. K.

AU - Tang, J. J.

PY - 2004/9/15

Y1 - 2004/9/15

N2 - TiW films were deposited onto glass substrates and GaN epitaxial layers by RF magnetron sputtering. It was found that TiW film deposited with a 300 W RF power could provide us a high transmittance and a low resistivity. GaN-based ultraviolet metal-semiconductor-metal (MSM) photodetectors were also fabricated. It was found that photocurrent to dark current contrast ratios were 4.35, 4.6 × 102 and 5.7 × 104 for the pholodetectors with ITO, TiN, and TiW electrodes, respectively. The large photocurrent to dark current contrast ratio could be attributed mainly to the fact that TiW can form a high Schottky barrier height on the surface of u-GaN epitaxial layers.

AB - TiW films were deposited onto glass substrates and GaN epitaxial layers by RF magnetron sputtering. It was found that TiW film deposited with a 300 W RF power could provide us a high transmittance and a low resistivity. GaN-based ultraviolet metal-semiconductor-metal (MSM) photodetectors were also fabricated. It was found that photocurrent to dark current contrast ratios were 4.35, 4.6 × 102 and 5.7 × 104 for the pholodetectors with ITO, TiN, and TiW electrodes, respectively. The large photocurrent to dark current contrast ratio could be attributed mainly to the fact that TiW can form a high Schottky barrier height on the surface of u-GaN epitaxial layers.

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EP - 29

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 1

ER -

GaN MSM photodetectors with TiW transparent electrodes

Abstract

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