Abstract
TiW films were deposited onto glass substrates and GaN epitaxial layers by RF magnetron sputtering. It was found that TiW film deposited with a 300 W RF power could provide us a high transmittance and a low resistivity. GaN-based ultraviolet metal-semiconductor-metal (MSM) photodetectors were also fabricated. It was found that photocurrent to dark current contrast ratios were 4.35, 4.6 × 102 and 5.7 × 104 for the pholodetectors with ITO, TiN, and TiW electrodes, respectively. The large photocurrent to dark current contrast ratio could be attributed mainly to the fact that TiW can form a high Schottky barrier height on the surface of u-GaN epitaxial layers.
Original language | English |
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Pages (from-to) | 25-29 |
Number of pages | 5 |
Journal | Materials Science and Engineering: B |
Volume | 112 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2004 Sept 15 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering