GaN MSM photodetectors with TiW transparent electrodes

C. K. Wang; Shoou-Jinn Chang; Y. K. Su; C. S. Chang; Y. Z. Chiou; C. H. Kuo; T. K. Lin; T. K. Ko; J. J. Tang

doi:10.1016/j.mseb.2004.05.002

GaN MSM photodetectors with TiW transparent electrodes

C. K. Wang, Shoou-Jinn Chang, Y. K. Su, C. S. Chang, Y. Z. Chiou, C. H. Kuo, T. K. Lin, T. K. Ko, J. J. Tang

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

TiW films were deposited onto glass substrates and GaN epitaxial layers by RF magnetron sputtering. It was found that TiW film deposited with a 300 W RF power could provide us a high transmittance and a low resistivity. GaN-based ultraviolet metal-semiconductor-metal (MSM) photodetectors were also fabricated. It was found that photocurrent to dark current contrast ratios were 4.35, 4.6 × 10² and 5.7 × 10⁴ for the pholodetectors with ITO, TiN, and TiW electrodes, respectively. The large photocurrent to dark current contrast ratio could be attributed mainly to the fact that TiW can form a high Schottky barrier height on the surface of u-GaN epitaxial layers.

Original language	English
Pages (from-to)	25-29
Number of pages	5
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	112
Issue number	1
DOIs	https://doi.org/10.1016/j.mseb.2004.05.002
Publication status	Published - 2004 Sep 15

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{87f9ede268084e38ab6df32ec056b784,

title = "GaN MSM photodetectors with TiW transparent electrodes",

abstract = "TiW films were deposited onto glass substrates and GaN epitaxial layers by RF magnetron sputtering. It was found that TiW film deposited with a 300 W RF power could provide us a high transmittance and a low resistivity. GaN-based ultraviolet metal-semiconductor-metal (MSM) photodetectors were also fabricated. It was found that photocurrent to dark current contrast ratios were 4.35, 4.6 × 102 and 5.7 × 104 for the pholodetectors with ITO, TiN, and TiW electrodes, respectively. The large photocurrent to dark current contrast ratio could be attributed mainly to the fact that TiW can form a high Schottky barrier height on the surface of u-GaN epitaxial layers.",

author = "Wang, {C. K.} and Shoou-Jinn Chang and Su, {Y. K.} and Chang, {C. S.} and Chiou, {Y. Z.} and Kuo, {C. H.} and Lin, {T. K.} and Ko, {T. K.} and Tang, {J. J.}",

year = "2004",

month = sep,

day = "15",

doi = "10.1016/j.mseb.2004.05.002",

language = "English",

volume = "112",

pages = "25--29",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "1",

}

GaN MSM photodetectors with TiW transparent electrodes. / Wang, C. K.; Chang, Shoou-Jinn; Su, Y. K.; Chang, C. S.; Chiou, Y. Z.; Kuo, C. H.; Lin, T. K.; Ko, T. K.; Tang, J. J.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 112, No. 1, 15.09.2004, p. 25-29.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - GaN MSM photodetectors with TiW transparent electrodes

AU - Wang, C. K.

AU - Chang, Shoou-Jinn

AU - Su, Y. K.

AU - Chang, C. S.

AU - Chiou, Y. Z.

AU - Kuo, C. H.

AU - Lin, T. K.

AU - Ko, T. K.

AU - Tang, J. J.

PY - 2004/9/15

Y1 - 2004/9/15

N2 - TiW films were deposited onto glass substrates and GaN epitaxial layers by RF magnetron sputtering. It was found that TiW film deposited with a 300 W RF power could provide us a high transmittance and a low resistivity. GaN-based ultraviolet metal-semiconductor-metal (MSM) photodetectors were also fabricated. It was found that photocurrent to dark current contrast ratios were 4.35, 4.6 × 102 and 5.7 × 104 for the pholodetectors with ITO, TiN, and TiW electrodes, respectively. The large photocurrent to dark current contrast ratio could be attributed mainly to the fact that TiW can form a high Schottky barrier height on the surface of u-GaN epitaxial layers.

AB - TiW films were deposited onto glass substrates and GaN epitaxial layers by RF magnetron sputtering. It was found that TiW film deposited with a 300 W RF power could provide us a high transmittance and a low resistivity. GaN-based ultraviolet metal-semiconductor-metal (MSM) photodetectors were also fabricated. It was found that photocurrent to dark current contrast ratios were 4.35, 4.6 × 102 and 5.7 × 104 for the pholodetectors with ITO, TiN, and TiW electrodes, respectively. The large photocurrent to dark current contrast ratio could be attributed mainly to the fact that TiW can form a high Schottky barrier height on the surface of u-GaN epitaxial layers.

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