GaN MSM UV Photodetector with Sputtered AlN Nucleation Layer

Chun Kai Wang, Yu Zung Chiou, Shoou Jinn Chang, Wei Chih Lai, Sheng Po Chang, Cheng Hsiung Yen, Chun Chi Hung

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors (PDs) with ex situ sputtered AlN nucleation layer were investigated and demonstrated. The crystal quality, electrical, and optical properties of GaN PDs were improved using ex situ sputtered AlN nucleation layer. Compared with in situ AlN nucleation layer, it was found that the X-ray rock curve widths and yellow or blue bands of cathodoluminescence spectra of the PDs prepared by ex situ sputtered AlN nucleation layer were significantly reduced and smaller due to the improved crystal quality. It was also found that the dark current and responsivity of PDs with ex situ sputtered AlN nucleation layer were more effectively reduced and enhanced. Moreover, GaN MSM PDs with ex situ sputtered AlN nucleation layer could achieve the higher quantum efficiency and detectivity.

Original languageEnglish
Article number7093119
Pages (from-to)4743-4748
Number of pages6
JournalIEEE Sensors Journal
Volume15
Issue number9
DOIs
Publication statusPublished - 2015 Sep

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'GaN MSM UV Photodetector with Sputtered AlN Nucleation Layer'. Together they form a unique fingerprint.

Cite this