GaN MSM UV photodetectors with an Al0.82In0.18N intermediate layer

Z. D. Huang; W. Y. Weng; S. J. Chang; C. J. Chiu; T. J. Hsueh; W. C. Lai; S. L. Wu

doi:10.1149/1.3589302

GaN MSM UV photodetectors with an Al_0.82In_0.18N intermediate layer

Z. D. Huang, W. Y. Weng, S. J. Chang, C. J. Chiu, T. J. Hsueh, W. C. Lai, S. L. Wu

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT) Al_0.82In_0.18N intermediate layer were fabricated and characterized. It was found that we could improve crystalline quality, reduce dark leakage current, enhance UV-to-visible rejection ratio, reduce noise level and achieve a larger detectivity by inserting the lattice-matched AlInN intermediate layer. With - 5 V applied, noise equivalent power and detectivity obtained were 1.47 10^-13 W and 4.95 10¹² cm Hz^0.5 W^-1, respectively, for the PDs with the AlInN intermediate layer.

Original language	English
Pages (from-to)	J221-J224
Journal	Journal of the Electrochemical Society
Volume	158
Issue number	7
DOIs	https://doi.org/10.1149/1.3589302
Publication status	Published - 2011

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrochemistry
Renewable Energy, Sustainability and the Environment

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.3589302

Cite this

@article{b442cf6254f9449c94cf7fcab35613bf,

title = "GaN MSM UV photodetectors with an Al0.82In0.18N intermediate layer",

abstract = "GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT) Al0.82In0.18N intermediate layer were fabricated and characterized. It was found that we could improve crystalline quality, reduce dark leakage current, enhance UV-to-visible rejection ratio, reduce noise level and achieve a larger detectivity by inserting the lattice-matched AlInN intermediate layer. With - 5 V applied, noise equivalent power and detectivity obtained were 1.47 10-13 W and 4.95 1012 cm Hz0.5 W-1, respectively, for the PDs with the AlInN intermediate layer.",

author = "Huang, {Z. D.} and Weng, {W. Y.} and Chang, {S. J.} and Chiu, {C. J.} and Hsueh, {T. J.} and Lai, {W. C.} and Wu, {S. L.}",

year = "2011",

doi = "10.1149/1.3589302",

language = "English",

volume = "158",

pages = "J221--J224",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

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TY - JOUR

T1 - GaN MSM UV photodetectors with an Al0.82In0.18N intermediate layer

AU - Huang, Z. D.

AU - Weng, W. Y.

AU - Chang, S. J.

AU - Chiu, C. J.

AU - Hsueh, T. J.

AU - Lai, W. C.

AU - Wu, S. L.

PY - 2011

Y1 - 2011

N2 - GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT) Al0.82In0.18N intermediate layer were fabricated and characterized. It was found that we could improve crystalline quality, reduce dark leakage current, enhance UV-to-visible rejection ratio, reduce noise level and achieve a larger detectivity by inserting the lattice-matched AlInN intermediate layer. With - 5 V applied, noise equivalent power and detectivity obtained were 1.47 10-13 W and 4.95 1012 cm Hz0.5 W-1, respectively, for the PDs with the AlInN intermediate layer.

AB - GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT) Al0.82In0.18N intermediate layer were fabricated and characterized. It was found that we could improve crystalline quality, reduce dark leakage current, enhance UV-to-visible rejection ratio, reduce noise level and achieve a larger detectivity by inserting the lattice-matched AlInN intermediate layer. With - 5 V applied, noise equivalent power and detectivity obtained were 1.47 10-13 W and 4.95 1012 cm Hz0.5 W-1, respectively, for the PDs with the AlInN intermediate layer.

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