GaN MSM UV photodetectors with an Al0.82In0.18N intermediate layer

Z. D. Huang, W. Y. Weng, S. J. Chang, C. J. Chiu, T. J. Hsueh, W. C. Lai, S. L. Wu

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5 Citations (Scopus)

Abstract

GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT) Al0.82In0.18N intermediate layer were fabricated and characterized. It was found that we could improve crystalline quality, reduce dark leakage current, enhance UV-to-visible rejection ratio, reduce noise level and achieve a larger detectivity by inserting the lattice-matched AlInN intermediate layer. With - 5 V applied, noise equivalent power and detectivity obtained were 1.47 10-13 W and 4.95 1012 cm Hz0.5 W-1, respectively, for the PDs with the AlInN intermediate layer.

Original languageEnglish
Pages (from-to)J221-J224
JournalJournal of the Electrochemical Society
Volume158
Issue number7
DOIs
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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