GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors with titanium tungsten (TiW) transparent electrodes were fabricated and characterized. It was found that the 10-nm-thick TiW film deposited with a 300-W RF power can still provide a reasonably high transmittance of 75.1 % at 300 nm, a low resistivity of 1.7 × 10-3 Ω · cm and an effective Schottky barrier height of 0.773 eV on u-GaN. We also achieved a peak responsivity of 0.192 A/W and a quantum efficiency of 66.4% from the GaN ultraviolet MSM photodetector with TiW electrodes. With a 3-V applied bias, it was found that minimum noise equivalent power and maximum D* of our detector were 1.987 × 10-10 W and 6.365 × 109 cmHz0.5W-1, respectively.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering