GaN MSM UV photodetectors with titanium tungsten transparent electrodes

C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, S. C. Chen, C. S. Chang, T. K. Lin, H. L. Liu, J. J. Tang

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51 Citations (Scopus)


GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors with titanium tungsten (TiW) transparent electrodes were fabricated and characterized. It was found that the 10-nm-thick TiW film deposited with a 300-W RF power can still provide a reasonably high transmittance of 75.1 % at 300 nm, a low resistivity of 1.7 × 10-3 Ω · cm and an effective Schottky barrier height of 0.773 eV on u-GaN. We also achieved a peak responsivity of 0.192 A/W and a quantum efficiency of 66.4% from the GaN ultraviolet MSM photodetector with TiW electrodes. With a 3-V applied bias, it was found that minimum noise equivalent power and maximum D* of our detector were 1.987 × 10-10 W and 6.365 × 109 cmHz0.5W-1, respectively.

Original languageEnglish
Pages (from-to)38-42
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number1
Publication statusPublished - 2006 Jan

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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