GaN nanocolumns formed by inductively coupled plasmas etching

S. C. Hung, Y. K. Su, Shoou-Jinn Chang, S. C. Chen, T. H. Fang, L. W. Ji

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

GaN nanocolumns were formed by inductively coupled plasma (ICP) etching. It was found that tops of these nanocolumns were hexagonal with the c-axis perpendicular to substrate surface. It was also found that density of the GaN nanocolumns depends strongly on etching parameters which suggests that the formation of these GaN nanocolumns was not related to the dislocation density in the original GaN epitaxial layers. Furthermore, it was found that we can reduce the dimension and increase the density of the GaN nanocolumns by decreasing the bias power during ICP etching.

Original languageEnglish
Pages (from-to)115-120
Number of pages6
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume28
Issue number2
DOIs
Publication statusPublished - 2005 Jul 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'GaN nanocolumns formed by inductively coupled plasmas etching'. Together they form a unique fingerprint.

Cite this