GaN nanowire field emitters with the adsorption of au nanoparticles

Tsung Ying Tsai; Shoou Jinn Chang; Wen Yin Weng; Shuguang Li; Shin Liu; Cheng Liang Hsu; Han Ting Hsueh; Ting Jen Hsueh

doi:10.1109/LED.2013.2247558

GaN nanowire field emitters with the adsorption of au nanoparticles

Tsung Ying Tsai, Shoou Jinn Chang, Wen Yin Weng, Shuguang Li, Shin Liu, Cheng Liang Hsu, Han Ting Hsueh, Ting Jen Hsueh

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We report the adsorption of Au nanoparticles onto the surface of GaN nanowires (NWs) through photo-enhanced chemical reaction and the fabrication of GaN NW field emitters. With the adsorption of Au nanoparticles, it is found that threshold field and work function are reduced from 8.29 V/mm and 4.1 eV to 6.67 V/mm and 3.2 eV, respectively. These improvements could be attributed to the larger band distortion and more electrons accumulation so that more electrons could be emitted for the GaN NW field emitters with Au nanoparticles.

Original language	English
Article number	6476631
Pages (from-to)	553-555
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	4
DOIs	https://doi.org/10.1109/LED.2013.2247558
Publication status	Published - 2013 Mar 13

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2013.2247558

Fingerprint Dive into the research topics of 'GaN nanowire field emitters with the adsorption of au nanoparticles'. Together they form a unique fingerprint.

Cite this

@article{af47612bb0e740ac8427dc2bbef8a7e7,

title = "GaN nanowire field emitters with the adsorption of au nanoparticles",

abstract = "We report the adsorption of Au nanoparticles onto the surface of GaN nanowires (NWs) through photo-enhanced chemical reaction and the fabrication of GaN NW field emitters. With the adsorption of Au nanoparticles, it is found that threshold field and work function are reduced from 8.29 V/mm and 4.1 eV to 6.67 V/mm and 3.2 eV, respectively. These improvements could be attributed to the larger band distortion and more electrons accumulation so that more electrons could be emitted for the GaN NW field emitters with Au nanoparticles.",

author = "Tsai, {Tsung Ying} and Chang, {Shoou Jinn} and Weng, {Wen Yin} and Shuguang Li and Shin Liu and Hsu, {Cheng Liang} and Hsueh, {Han Ting} and Hsueh, {Ting Jen}",

year = "2013",

month = mar,

day = "13",

doi = "10.1109/LED.2013.2247558",

language = "English",

volume = "34",

pages = "553--555",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - GaN nanowire field emitters with the adsorption of au nanoparticles

AU - Tsai, Tsung Ying

AU - Chang, Shoou Jinn

AU - Weng, Wen Yin

AU - Li, Shuguang

AU - Liu, Shin

AU - Hsu, Cheng Liang

AU - Hsueh, Han Ting

AU - Hsueh, Ting Jen

PY - 2013/3/13

Y1 - 2013/3/13

N2 - We report the adsorption of Au nanoparticles onto the surface of GaN nanowires (NWs) through photo-enhanced chemical reaction and the fabrication of GaN NW field emitters. With the adsorption of Au nanoparticles, it is found that threshold field and work function are reduced from 8.29 V/mm and 4.1 eV to 6.67 V/mm and 3.2 eV, respectively. These improvements could be attributed to the larger band distortion and more electrons accumulation so that more electrons could be emitted for the GaN NW field emitters with Au nanoparticles.

AB - We report the adsorption of Au nanoparticles onto the surface of GaN nanowires (NWs) through photo-enhanced chemical reaction and the fabrication of GaN NW field emitters. With the adsorption of Au nanoparticles, it is found that threshold field and work function are reduced from 8.29 V/mm and 4.1 eV to 6.67 V/mm and 3.2 eV, respectively. These improvements could be attributed to the larger band distortion and more electrons accumulation so that more electrons could be emitted for the GaN NW field emitters with Au nanoparticles.

UR - http://www.scopus.com/inward/record.url?scp=84875684206&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875684206&partnerID=8YFLogxK

U2 - 10.1109/LED.2013.2247558

DO - 10.1109/LED.2013.2247558

M3 - Article

AN - SCOPUS:84875684206

VL - 34

SP - 553

EP - 555

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 4

M1 - 6476631

ER -