GaN nanowire field emitters with the adsorption of au nanoparticles

Tsung Ying Tsai; Shoou Jinn Chang; Wen Yin Weng; Shuguang Li; Shin Liu; Cheng Liang Hsu; Han Ting Hsueh; Ting Jen Hsueh

doi:10.1109/LED.2013.2247558

GaN nanowire field emitters with the adsorption of au nanoparticles

Tsung Ying Tsai, Shoou Jinn Chang, Wen Yin Weng, Shuguang Li, Shin Liu, Cheng Liang Hsu, Han Ting Hsueh, Ting Jen Hsueh

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We report the adsorption of Au nanoparticles onto the surface of GaN nanowires (NWs) through photo-enhanced chemical reaction and the fabrication of GaN NW field emitters. With the adsorption of Au nanoparticles, it is found that threshold field and work function are reduced from 8.29 V/mm and 4.1 eV to 6.67 V/mm and 3.2 eV, respectively. These improvements could be attributed to the larger band distortion and more electrons accumulation so that more electrons could be emitted for the GaN NW field emitters with Au nanoparticles.

Original language	English
Article number	6476631
Pages (from-to)	553-555
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	4
DOIs	https://doi.org/10.1109/LED.2013.2247558
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2013.2247558

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abstract = "We report the adsorption of Au nanoparticles onto the surface of GaN nanowires (NWs) through photo-enhanced chemical reaction and the fabrication of GaN NW field emitters. With the adsorption of Au nanoparticles, it is found that threshold field and work function are reduced from 8.29 V/mm and 4.1 eV to 6.67 V/mm and 3.2 eV, respectively. These improvements could be attributed to the larger band distortion and more electrons accumulation so that more electrons could be emitted for the GaN NW field emitters with Au nanoparticles.",

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AU - Tsai, Tsung Ying

AU - Chang, Shoou Jinn

AU - Weng, Wen Yin

AU - Li, Shuguang

AU - Liu, Shin

AU - Hsu, Cheng Liang

AU - Hsueh, Han Ting

AU - Hsueh, Ting Jen

PY - 2013

Y1 - 2013

N2 - We report the adsorption of Au nanoparticles onto the surface of GaN nanowires (NWs) through photo-enhanced chemical reaction and the fabrication of GaN NW field emitters. With the adsorption of Au nanoparticles, it is found that threshold field and work function are reduced from 8.29 V/mm and 4.1 eV to 6.67 V/mm and 3.2 eV, respectively. These improvements could be attributed to the larger band distortion and more electrons accumulation so that more electrons could be emitted for the GaN NW field emitters with Au nanoparticles.

AB - We report the adsorption of Au nanoparticles onto the surface of GaN nanowires (NWs) through photo-enhanced chemical reaction and the fabrication of GaN NW field emitters. With the adsorption of Au nanoparticles, it is found that threshold field and work function are reduced from 8.29 V/mm and 4.1 eV to 6.67 V/mm and 3.2 eV, respectively. These improvements could be attributed to the larger band distortion and more electrons accumulation so that more electrons could be emitted for the GaN NW field emitters with Au nanoparticles.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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GaN nanowire field emitters with the adsorption of au nanoparticles

Abstract

All Science Journal Classification (ASJC) codes

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