GaN nanowire field emitters with the adsorption of au nanoparticles

Tsung Ying Tsai, Shoou Jinn Chang, Wen Yin Weng, Shuguang Li, Shin Liu, Cheng Liang Hsu, Han Ting Hsueh, Ting Jen Hsueh

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We report the adsorption of Au nanoparticles onto the surface of GaN nanowires (NWs) through photo-enhanced chemical reaction and the fabrication of GaN NW field emitters. With the adsorption of Au nanoparticles, it is found that threshold field and work function are reduced from 8.29 V/mm and 4.1 eV to 6.67 V/mm and 3.2 eV, respectively. These improvements could be attributed to the larger band distortion and more electrons accumulation so that more electrons could be emitted for the GaN NW field emitters with Au nanoparticles.

Original languageEnglish
Article number6476631
Pages (from-to)553-555
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number4
DOIs
Publication statusPublished - 2013 Mar 13

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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