GaN nanowires as electron field emitters

Bohan Wang, Kuangyuan Hsu, Yon-Hua Tzeng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Gallium nitride (GaN) nanowires were synthesized by thermal chemical vapor deposition and characterized for applications as electron field emitters. Semiconductive GaN provides a self-current-limiting function to help reduce the possibility for individual GaN nanowires to be overloaded by high electron emission current which might cause damages to the nanowires. Field emission measurements of GaN nanowires show a turn-on electric field of 4.47V/μm at the electron field emission current density of 10μA/cm2. Crystalline quality and low electron affinity of GaN nanowires contribute to the measured electron field emission characteristics.

Original languageEnglish
Title of host publication2010 10th IEEE Conference on Nanotechnology, NANO 2010
Pages426-429
Number of pages4
DOIs
Publication statusPublished - 2010
Event2010 10th IEEE Conference on Nanotechnology, NANO 2010 - Ilsan, Gyeonggi-Do, Korea, Republic of
Duration: 2010 Aug 172010 Aug 20

Other

Other2010 10th IEEE Conference on Nanotechnology, NANO 2010
CountryKorea, Republic of
CityIlsan, Gyeonggi-Do
Period10-08-1710-08-20

Fingerprint

gallium nitrides
emitters
nanowires
electron emission
field emission
electrons
electron affinity
vapor deposition
current density
damage
electric fields
causes

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Wang, B., Hsu, K., & Tzeng, Y-H. (2010). GaN nanowires as electron field emitters. In 2010 10th IEEE Conference on Nanotechnology, NANO 2010 (pp. 426-429). [5697772] https://doi.org/10.1109/NANO.2010.5697772
Wang, Bohan ; Hsu, Kuangyuan ; Tzeng, Yon-Hua. / GaN nanowires as electron field emitters. 2010 10th IEEE Conference on Nanotechnology, NANO 2010. 2010. pp. 426-429
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abstract = "Gallium nitride (GaN) nanowires were synthesized by thermal chemical vapor deposition and characterized for applications as electron field emitters. Semiconductive GaN provides a self-current-limiting function to help reduce the possibility for individual GaN nanowires to be overloaded by high electron emission current which might cause damages to the nanowires. Field emission measurements of GaN nanowires show a turn-on electric field of 4.47V/μm at the electron field emission current density of 10μA/cm2. Crystalline quality and low electron affinity of GaN nanowires contribute to the measured electron field emission characteristics.",
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Wang, B, Hsu, K & Tzeng, Y-H 2010, GaN nanowires as electron field emitters. in 2010 10th IEEE Conference on Nanotechnology, NANO 2010., 5697772, pp. 426-429, 2010 10th IEEE Conference on Nanotechnology, NANO 2010, Ilsan, Gyeonggi-Do, Korea, Republic of, 10-08-17. https://doi.org/10.1109/NANO.2010.5697772

GaN nanowires as electron field emitters. / Wang, Bohan; Hsu, Kuangyuan; Tzeng, Yon-Hua.

2010 10th IEEE Conference on Nanotechnology, NANO 2010. 2010. p. 426-429 5697772.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - Gallium nitride (GaN) nanowires were synthesized by thermal chemical vapor deposition and characterized for applications as electron field emitters. Semiconductive GaN provides a self-current-limiting function to help reduce the possibility for individual GaN nanowires to be overloaded by high electron emission current which might cause damages to the nanowires. Field emission measurements of GaN nanowires show a turn-on electric field of 4.47V/μm at the electron field emission current density of 10μA/cm2. Crystalline quality and low electron affinity of GaN nanowires contribute to the measured electron field emission characteristics.

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Wang B, Hsu K, Tzeng Y-H. GaN nanowires as electron field emitters. In 2010 10th IEEE Conference on Nanotechnology, NANO 2010. 2010. p. 426-429. 5697772 https://doi.org/10.1109/NANO.2010.5697772