GaN p-i-n photodetectors with an LT-GaN interlayer

J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, K. C. Huang, W. R. Chen, C. H. Lan, C. C. Huang, W. J. Lin, Y. C. Cheng, C. M. Chang

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7 Citations (Scopus)


Nitride-based p-i-n ultraviolet (UV) photodetectors with a low-temperature (LT) GaN interlayer were proposed and fabricated. Compared with a conventional GaN p-i-n photodetector, it was found that both the dark current and ideality factor of the p-i-n photodetector with an LT-GaN interlayer became larger whereas the UV-to-visible rejection ratio became smaller because of the poor crystal quality of the LT-GaN interlayer. However, the responsivity of the GaN p-i-n photodetector with an LT-GaN interlayer was larger than that of the conventional GaN p-i-n photodetector under a high reverse bias because of the carrier multiplication effect and/or internal gain that originated from the defect levels.

Original languageEnglish
Pages (from-to)59-62
Number of pages4
JournalIET Optoelectronics
Issue number2
Publication statusPublished - 2008

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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