GaN p-n junction diode formed by Si ion implantation into p-GaN

M. L. Lee; J. K. Sheu; L. S. Yeh; M. S. Tsai; C. J. Kao; C. J. Tun; S. J. Chang; G. C. Chi

doi:10.1016/S0038-1101(02)00224-1

GaN p-n junction diode formed by Si ion implantation into p-GaN

M. L. Lee
, J. K. Sheu
, L. S. Yeh
, M. S. Tsai
, C. J. Kao
, C. J. Tun
, S. J. Chang
, G. C. Chi

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

²⁸Si⁺ implantation into Mg-doped GaN, followed by thermal annealing in N₂ was performed to achieve n⁺-GaN layers. The carrier concentrations of the films changed from 3 × 10¹⁷ (p-type) to 5 × 10¹⁹ cm^-3 (n-type) when the Si-implanted p-type GaN was properly annealed. Specific contact resistance (ρ_c) of Ti/Al/Pt/Au Ohmic contact to n-GaN, formed by ²⁸Si⁺ implantation into p-type GaN, was also evaluated by transmission line model. It was found that we could achieve a ρ_c value as low as 1.5 × 10^-6 Ω cm² when the metal contact was alloyed in N₂ ambience at 600 °C. Si-implanted GaN p-n junction light-emitting diodes were also fabricated. Electroluminescence measurements showed that two emission peaks at around 385 and 420 nm were observed, which could be attributed to the near band-edge transition and donor-to-acceptor transition, respectively.

Original language	English
Pages (from-to)	2179-2183
Number of pages	5
Journal	Solid-State Electronics
Volume	46
Issue number	12
DOIs	https://doi.org/10.1016/S0038-1101(02)00224-1
Publication status	Published - 2002 Dec

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(02)00224-1

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@article{d50bc405eb9e45a1b8a9010c16fba8ba,

title = "GaN p-n junction diode formed by Si ion implantation into p-GaN",

abstract = "28Si+ implantation into Mg-doped GaN, followed by thermal annealing in N2 was performed to achieve n+-GaN layers. The carrier concentrations of the films changed from 3 × 1017 (p-type) to 5 × 1019 cm-3 (n-type) when the Si-implanted p-type GaN was properly annealed. Specific contact resistance (ρc) of Ti/Al/Pt/Au Ohmic contact to n-GaN, formed by 28Si+ implantation into p-type GaN, was also evaluated by transmission line model. It was found that we could achieve a ρc value as low as 1.5 × 10-6 Ω cm2 when the metal contact was alloyed in N2 ambience at 600 °C. Si-implanted GaN p-n junction light-emitting diodes were also fabricated. Electroluminescence measurements showed that two emission peaks at around 385 and 420 nm were observed, which could be attributed to the near band-edge transition and donor-to-acceptor transition, respectively.",

author = "Lee, \{M. L.\} and Sheu, \{J. K.\} and Yeh, \{L. S.\} and Tsai, \{M. S.\} and Kao, \{C. J.\} and Tun, \{C. J.\} and Chang, \{S. J.\} and Chi, \{G. C.\}",

note = "Funding Information: The authors would like to acknowledge the financial support from the National Science Council for their research grant of NSC 90-2215-E-008-043 and NSC 90-2112-M-008-046.",

year = "2002",

month = dec,

doi = "10.1016/S0038-1101(02)00224-1",

language = "English",

volume = "46",

pages = "2179--2183",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "12",

}

TY - JOUR

T1 - GaN p-n junction diode formed by Si ion implantation into p-GaN

AU - Lee, M. L.

AU - Sheu, J. K.

AU - Yeh, L. S.

AU - Tsai, M. S.

AU - Kao, C. J.

AU - Tun, C. J.

AU - Chang, S. J.

AU - Chi, G. C.

N1 - Funding Information: The authors would like to acknowledge the financial support from the National Science Council for their research grant of NSC 90-2215-E-008-043 and NSC 90-2112-M-008-046.

PY - 2002/12

Y1 - 2002/12

N2 - 28Si+ implantation into Mg-doped GaN, followed by thermal annealing in N2 was performed to achieve n+-GaN layers. The carrier concentrations of the films changed from 3 × 1017 (p-type) to 5 × 1019 cm-3 (n-type) when the Si-implanted p-type GaN was properly annealed. Specific contact resistance (ρc) of Ti/Al/Pt/Au Ohmic contact to n-GaN, formed by 28Si+ implantation into p-type GaN, was also evaluated by transmission line model. It was found that we could achieve a ρc value as low as 1.5 × 10-6 Ω cm2 when the metal contact was alloyed in N2 ambience at 600 °C. Si-implanted GaN p-n junction light-emitting diodes were also fabricated. Electroluminescence measurements showed that two emission peaks at around 385 and 420 nm were observed, which could be attributed to the near band-edge transition and donor-to-acceptor transition, respectively.

AB - 28Si+ implantation into Mg-doped GaN, followed by thermal annealing in N2 was performed to achieve n+-GaN layers. The carrier concentrations of the films changed from 3 × 1017 (p-type) to 5 × 1019 cm-3 (n-type) when the Si-implanted p-type GaN was properly annealed. Specific contact resistance (ρc) of Ti/Al/Pt/Au Ohmic contact to n-GaN, formed by 28Si+ implantation into p-type GaN, was also evaluated by transmission line model. It was found that we could achieve a ρc value as low as 1.5 × 10-6 Ω cm2 when the metal contact was alloyed in N2 ambience at 600 °C. Si-implanted GaN p-n junction light-emitting diodes were also fabricated. Electroluminescence measurements showed that two emission peaks at around 385 and 420 nm were observed, which could be attributed to the near band-edge transition and donor-to-acceptor transition, respectively.

UR - https://www.scopus.com/pages/publications/0036890279

UR - https://www.scopus.com/pages/publications/0036890279#tab=citedBy

U2 - 10.1016/S0038-1101(02)00224-1

DO - 10.1016/S0038-1101(02)00224-1

M3 - Article

AN - SCOPUS:0036890279

SN - 0038-1101

VL - 46

SP - 2179

EP - 2183

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 12

ER -

GaN p-n junction diode formed by Si ion implantation into p-GaN

Abstract

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