GaN photodetectors prepared on silicon and sapphire substrates

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

GaN ultraviolet metal-semiconductormetal photodetectors (PDs) grown on Si and sapphire substrates were prepared. It was found that dark currents of PDs prepared on Si substrates were much smaller than that prepared on sapphire substrate. With an incident wavelength of 355 nm and an applied bias of 5 V, it was found that peak responsivities were 0.016 and 0.074 A/W while rejection ratios (i.e. 355 nm : 425 nm) were 2100 and 420 for u-GaN on Si and u-GaN on sapphire, respectively. The corresponding D* were 1.73×1010 and 1.08×109 cmHz 0.5W-1, respectively.

Original languageEnglish
Title of host publication2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, China
Duration: 2008 Dec 82008 Dec 10

Publication series

Name2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
CountryChina
CityHong Kong
Period08-12-0808-12-10

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • Cite this

    Chang, S. P., Chang, S. J., Lu, C. Y., & Chuang, R. W. (2008). GaN photodetectors prepared on silicon and sapphire substrates. In 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC [4760697] (2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC). https://doi.org/10.1109/EDSSC.2008.4760697