GaN photodetectors prepared on silicon and sapphire substrates

S. P. Chang; S. J. Chang; C. Y. Lu; R. W. Chuang

doi:10.1109/EDSSC.2008.4760697

GaN photodetectors prepared on silicon and sapphire substrates

S. P. Chang, S. J. Chang, C. Y. Lu, R. W. Chuang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

GaN ultraviolet metal-semiconductormetal photodetectors (PDs) grown on Si and sapphire substrates were prepared. It was found that dark currents of PDs prepared on Si substrates were much smaller than that prepared on sapphire substrate. With an incident wavelength of 355 nm and an applied bias of 5 V, it was found that peak responsivities were 0.016 and 0.074 A/W while rejection ratios (i.e. 355 nm : 425 nm) were 2100 and 420 for u-GaN on Si and u-GaN on sapphire, respectively. The corresponding D^* were 1.73×10¹⁰ and 1.08×10⁹ cmHz ^0.5W^-1, respectively.

Original language	English
Title of host publication	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs	https://doi.org/10.1109/EDSSC.2008.4760697
Publication status	Published - 2008
Event	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, China Duration: 2008 Dec 8 → 2008 Dec 10

Publication series

Name	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
Country/Territory	China
City	Hong Kong
Period	08-12-08 → 08-12-10

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/EDSSC.2008.4760697

Cite this

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title = "GaN photodetectors prepared on silicon and sapphire substrates",

abstract = "GaN ultraviolet metal-semiconductormetal photodetectors (PDs) grown on Si and sapphire substrates were prepared. It was found that dark currents of PDs prepared on Si substrates were much smaller than that prepared on sapphire substrate. With an incident wavelength of 355 nm and an applied bias of 5 V, it was found that peak responsivities were 0.016 and 0.074 A/W while rejection ratios (i.e. 355 nm : 425 nm) were 2100 and 420 for u-GaN on Si and u-GaN on sapphire, respectively. The corresponding D* were 1.73×1010 and 1.08×109 cmHz 0.5W-1, respectively.",

author = "Chang, {S. P.} and Chang, {S. J.} and Lu, {C. Y.} and Chuang, {R. W.}",

note = "Copyright: Copyright 2009 Elsevier B.V., All rights reserved.; 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC ; Conference date: 08-12-2008 Through 10-12-2008",

year = "2008",

doi = "10.1109/EDSSC.2008.4760697",

language = "English",

isbn = "9781424425402",

series = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC",

booktitle = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC",

}

Chang, SP, Chang, SJ, Lu, CY & Chuang, RW 2008, GaN photodetectors prepared on silicon and sapphire substrates. in 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC., 4760697, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, Hong Kong, China, 08-12-08. https://doi.org/10.1109/EDSSC.2008.4760697

GaN photodetectors prepared on silicon and sapphire substrates. / Chang, S. P.; Chang, S. J.; Lu, C. Y. et al.
2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC. 2008. 4760697 (2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - GaN photodetectors prepared on silicon and sapphire substrates

AU - Chang, S. P.

AU - Chang, S. J.

AU - Lu, C. Y.

AU - Chuang, R. W.

PY - 2008

Y1 - 2008

N2 - GaN ultraviolet metal-semiconductormetal photodetectors (PDs) grown on Si and sapphire substrates were prepared. It was found that dark currents of PDs prepared on Si substrates were much smaller than that prepared on sapphire substrate. With an incident wavelength of 355 nm and an applied bias of 5 V, it was found that peak responsivities were 0.016 and 0.074 A/W while rejection ratios (i.e. 355 nm : 425 nm) were 2100 and 420 for u-GaN on Si and u-GaN on sapphire, respectively. The corresponding D* were 1.73×1010 and 1.08×109 cmHz 0.5W-1, respectively.

AB - GaN ultraviolet metal-semiconductormetal photodetectors (PDs) grown on Si and sapphire substrates were prepared. It was found that dark currents of PDs prepared on Si substrates were much smaller than that prepared on sapphire substrate. With an incident wavelength of 355 nm and an applied bias of 5 V, it was found that peak responsivities were 0.016 and 0.074 A/W while rejection ratios (i.e. 355 nm : 425 nm) were 2100 and 420 for u-GaN on Si and u-GaN on sapphire, respectively. The corresponding D* were 1.73×1010 and 1.08×109 cmHz 0.5W-1, respectively.

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U2 - 10.1109/EDSSC.2008.4760697

DO - 10.1109/EDSSC.2008.4760697

M3 - Conference contribution

AN - SCOPUS:63249099134

SN - 9781424425402

T3 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

BT - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

T2 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Y2 - 8 December 2008 through 10 December 2008

ER -

GaN photodetectors prepared on silicon and sapphire substrates

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