GaN schottky barrier photodetectors prepared on patterned sapphire substrate

Shoou-Jinn Chang, S. M. Wang, T. P. Chen, S. J. Young, Yu-Cheng Lin, S. L. Wu, B. R. Huang

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5 Citations (Scopus)


A high quality GaN Schottky barrier photodetector (PD) was prepared on patterned sapphire substrates (PSSs) by metallorganic chemical vapor deposition. Compared with the PD prepared on a conventional flat sapphire substrate, we can reduce dark current and enhance responsivity. Under a -2 V applied bias, noise equivalent power and normalized detectivity (D) were 9.08× 10 -11 W and 1.74× 1010 cm Hz0.5 W-1, respectively, for the PD prepared on PSS. These values were also better than those achieved from the PD prepared on a flat sapphire substrate.

Original languageEnglish
JournalJournal of the Electrochemical Society
Issue number6
Publication statusPublished - 2010 Nov 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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