GaN schottky barrier photodetectors prepared on patterned sapphire substrate

S. J. Chang, S. M. Wang, T. P. Chen, S. J. Young, Y. C. Lin, S. L. Wu, B. R. Huang

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


A high quality GaN Schottky barrier photodetector (PD) was prepared on patterned sapphire substrates (PSSs) by metallorganic chemical vapor deposition. Compared with the PD prepared on a conventional flat sapphire substrate, we can reduce dark current and enhance responsivity. Under a -2 V applied bias, noise equivalent power and normalized detectivity (D) were 9.08× 10 -11 W and 1.74× 1010 cm Hz0.5 W-1, respectively, for the PD prepared on PSS. These values were also better than those achieved from the PD prepared on a flat sapphire substrate.

Original languageEnglish
Pages (from-to)J212-J215
JournalJournal of the Electrochemical Society
Issue number6
Publication statusPublished - 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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