GaN schottky barrier photodetectors with a β-Ga2O 3 cap layer

Zhen Da Huang; Ricky Wenkuei Chuang; Wen Yin Weng; Shoou Jinn Chang; Chiu Jung Chiu; San Lein Wu

doi:10.1143/APEX.5.116701

GaN schottky barrier photodetectors with a β-Ga₂O ₃ cap layer

Zhen Da Huang, Ricky Wenkuei Chuang, Wen Yin Weng, Shoou Jinn Chang, Chiu Jung Chiu, San Lein Wu

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

GaN Schottky barrier UV photodetectors (PDs) with a β-Ga ₂O₃ cap layer realized by furnace oxidation of GaN epitaxial layer were fabricated and characterized. With the cap layer inserted, it was found that the reverse leakage current could be reduced by more than 4 orders of magnitude and the UV-to-visible rejection ratio increased by 21 times. When compared with the conventional GaN PDs, incorporating an additional β-Ga₂O₃ cap layer helps to reduce the noise level and at the same time achieve a larger detectivity.

Original language	English
Article number	116701
Journal	Applied Physics Express
Volume	5
Issue number	11
DOIs	https://doi.org/10.1143/APEX.5.116701
Publication status	Published - 2012 Nov

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "GaN schottky barrier photodetectors with a β-Ga2O 3 cap layer",

abstract = "GaN Schottky barrier UV photodetectors (PDs) with a β-Ga 2O3 cap layer realized by furnace oxidation of GaN epitaxial layer were fabricated and characterized. With the cap layer inserted, it was found that the reverse leakage current could be reduced by more than 4 orders of magnitude and the UV-to-visible rejection ratio increased by 21 times. When compared with the conventional GaN PDs, incorporating an additional β-Ga2O3 cap layer helps to reduce the noise level and at the same time achieve a larger detectivity.",

author = "Huang, {Zhen Da} and Chuang, {Ricky Wenkuei} and Weng, {Wen Yin} and Chang, {Shoou Jinn} and Chiu, {Chiu Jung} and Wu, {San Lein}",

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doi = "10.1143/APEX.5.116701",

language = "English",

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journal = "Applied Physics Express",

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AU - Huang, Zhen Da

AU - Chuang, Ricky Wenkuei

AU - Weng, Wen Yin

AU - Chang, Shoou Jinn

AU - Chiu, Chiu Jung

AU - Wu, San Lein

PY - 2012/11

Y1 - 2012/11

N2 - GaN Schottky barrier UV photodetectors (PDs) with a β-Ga 2O3 cap layer realized by furnace oxidation of GaN epitaxial layer were fabricated and characterized. With the cap layer inserted, it was found that the reverse leakage current could be reduced by more than 4 orders of magnitude and the UV-to-visible rejection ratio increased by 21 times. When compared with the conventional GaN PDs, incorporating an additional β-Ga2O3 cap layer helps to reduce the noise level and at the same time achieve a larger detectivity.

AB - GaN Schottky barrier UV photodetectors (PDs) with a β-Ga 2O3 cap layer realized by furnace oxidation of GaN epitaxial layer were fabricated and characterized. With the cap layer inserted, it was found that the reverse leakage current could be reduced by more than 4 orders of magnitude and the UV-to-visible rejection ratio increased by 21 times. When compared with the conventional GaN PDs, incorporating an additional β-Ga2O3 cap layer helps to reduce the noise level and at the same time achieve a larger detectivity.

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GaN schottky barrier photodetectors with a β-Ga₂O ₃ cap layer

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