GaN schottky barrier photodetectors with a β-Ga2O 3 cap layer

Zhen Da Huang, Ricky Wenkuei Chuang, Wen Yin Weng, Shoou Jinn Chang, Chiu Jung Chiu, San Lein Wu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


GaN Schottky barrier UV photodetectors (PDs) with a β-Ga 2O3 cap layer realized by furnace oxidation of GaN epitaxial layer were fabricated and characterized. With the cap layer inserted, it was found that the reverse leakage current could be reduced by more than 4 orders of magnitude and the UV-to-visible rejection ratio increased by 21 times. When compared with the conventional GaN PDs, incorporating an additional β-Ga2O3 cap layer helps to reduce the noise level and at the same time achieve a larger detectivity.

Original languageEnglish
Article number116701
JournalApplied Physics Express
Issue number11
Publication statusPublished - 2012 Nov

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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