@article{37ade9da12c94e8cae101c1349682b27,
title = "GaN Schottky barrier photodetectors with a lattice-matched Al 0.82In0.18 intermediate layer",
abstract = "GaN Schottky barrier ultraviolet (UV) photodetectors (PDs) with a low-temperature Al0.82In0.18 intermediate layer were fabricated and characterized. With the intermediate layer, it was found that we could reduce the reverse leakage current by more than three orders of magnitude and achieve a 45 times larger UV-to-visible rejection ratio. Compared with the conventional GaN PDs, it was found that we could also reduce noise level and achieve a larger detectivity by inserting the lattice-matched AlInN intermediate layer.",
author = "Huang, {Z. D.} and Weng, {W. Y.} and Chang, {S. J.} and Hung, {S. C.} and Chiu, {C. J.} and Hsueh, {T. J.} and Lai, {W. C.} and Wu, {S. L.}",
note = "Funding Information: Manuscript received January 02, 2011; revised March 16, 2011; accepted April 04, 2011. Date of publication April 15, 2011; date of current version October 26, 2011. This work was supported in part by the Center for Micro/Nano Science and Technology, National Cheng Kung University (NCKU) and in part by the Advanced Optoelectronic Technology Center, NCKU, under projects from the Ministry of Education, Taiwan. The work wasalso part supported by the Bureau of Energy, Ministry of Economic Affairs of Taiwan under Contract 98-D0204-6. The associate editor coordinating the review of this paper and approving it for publication was Prof. Ralph Etienne-Cummings.",
year = "2011",
doi = "10.1109/JSEN.2011.2143402",
language = "English",
volume = "11",
pages = "2895--2901",
journal = "IEEE Sensors Journal",
issn = "1530-437X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}