The gallium nitride (GaN) Schottky barrier photodetectors with a low-temperature (LT) GaN cap layer was studied. Dark current-voltage (I-V) characteristics of the GaN Schottky barrier photodiodes (PD) were shown. No significant difference in resistivity was observed between the as-grown LT GaN and the annealed LT GaN.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)