GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

M. L. Lee; J. K. Sheu; W. C. Lai; S. J. Chang; Y. K. Su; M. G. Chen; C. J. Kao; G. C. Chi; J. M. Tsai

doi:10.1063/1.1570519

GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

M. L. Lee, J. K. Sheu, W. C. Lai, S. J. Chang, Y. K. Su, M. G. Chen, C. J. Kao, G. C. Chi, J. M. Tsai

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Abstract

The gallium nitride (GaN) Schottky barrier photodetectors with a low-temperature (LT) GaN cap layer was studied. Dark current-voltage (I-V) characteristics of the GaN Schottky barrier photodiodes (PD) were shown. No significant difference in resistivity was observed between the as-grown LT GaN and the annealed LT GaN.

Original language	English
Pages (from-to)	2913-2915
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	17
DOIs	https://doi.org/10.1063/1.1570519
Publication status	Published - 2003 Apr 28

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1570519

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title = "GaN Schottky barrier photodetectors with a low-temperature GaN cap layer",

abstract = "The gallium nitride (GaN) Schottky barrier photodetectors with a low-temperature (LT) GaN cap layer was studied. Dark current-voltage (I-V) characteristics of the GaN Schottky barrier photodiodes (PD) were shown. No significant difference in resistivity was observed between the as-grown LT GaN and the annealed LT GaN.",

author = "Lee, {M. L.} and Sheu, {J. K.} and Lai, {W. C.} and Chang, {S. J.} and Su, {Y. K.} and Chen, {M. G.} and Kao, {C. J.} and Chi, {G. C.} and Tsai, {J. M.}",

year = "2003",

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doi = "10.1063/1.1570519",

language = "English",

volume = "82",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

AU - Lee, M. L.

AU - Sheu, J. K.

AU - Lai, W. C.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Chen, M. G.

AU - Kao, C. J.

AU - Chi, G. C.

AU - Tsai, J. M.

PY - 2003/4/28

Y1 - 2003/4/28

N2 - The gallium nitride (GaN) Schottky barrier photodetectors with a low-temperature (LT) GaN cap layer was studied. Dark current-voltage (I-V) characteristics of the GaN Schottky barrier photodiodes (PD) were shown. No significant difference in resistivity was observed between the as-grown LT GaN and the annealed LT GaN.

AB - The gallium nitride (GaN) Schottky barrier photodetectors with a low-temperature (LT) GaN cap layer was studied. Dark current-voltage (I-V) characteristics of the GaN Schottky barrier photodiodes (PD) were shown. No significant difference in resistivity was observed between the as-grown LT GaN and the annealed LT GaN.

UR - http://www.scopus.com/inward/record.url?scp=0038297114&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038297114&partnerID=8YFLogxK

U2 - 10.1063/1.1570519

DO - 10.1063/1.1570519

M3 - Article

AN - SCOPUS:0038297114

SN - 0003-6951

VL - 82

SP - 2913

EP - 2915

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

Abstract

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