GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

M. L. Lee, J. K. Sheu, W. C. Lai, S. J. Chang, Y. K. Su, M. G. Chen, C. J. Kao, G. C. Chi, J. M. Tsai

Research output: Contribution to journalArticlepeer-review

45 Citations (Scopus)

Abstract

The gallium nitride (GaN) Schottky barrier photodetectors with a low-temperature (LT) GaN cap layer was studied. Dark current-voltage (I-V) characteristics of the GaN Schottky barrier photodiodes (PD) were shown. No significant difference in resistivity was observed between the as-grown LT GaN and the annealed LT GaN.

Original languageEnglish
Pages (from-to)2913-2915
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number17
DOIs
Publication statusPublished - 2003 Apr 28

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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