GaN schottky barrier photodetectors with a semi-insulating AlInN cap layer

S. J. Chang, W. Y. Weng, W. C. Lai, T. J. Hsueh, S. C. Shei, X. F. Zeng, S. L. Wu

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

UV GaN Schottky barrier photodetectors with a semi-insulating AlInN cap layer were proposed and fabricated. By inserting the AlInN cap layer, we can reduce the dark leakage current by more than 2 orders of magnitude compared with conventional devices. We can also use the AlInN cap layer to suppress the photoconductive gain, enhance the UV-to-visible rejection ratio, reduce the noise level, and enhance the detectivity.

Original languageEnglish
Pages (from-to)J120-J124
JournalJournal of the Electrochemical Society
Volume157
Issue number4
DOIs
Publication statusPublished - 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Renewable Energy, Sustainability and the Environment

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