Abstract
UV GaN Schottky barrier photodetectors with a semi-insulating AlInN cap layer were proposed and fabricated. By inserting the AlInN cap layer, we can reduce the dark leakage current by more than 2 orders of magnitude compared with conventional devices. We can also use the AlInN cap layer to suppress the photoconductive gain, enhance the UV-to-visible rejection ratio, reduce the noise level, and enhance the detectivity.
Original language | English |
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Pages (from-to) | J120-J124 |
Journal | Journal of the Electrochemical Society |
Volume | 157 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2010 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Surfaces, Coatings and Films
- Electrochemistry
- Renewable Energy, Sustainability and the Environment