GaN Schottky photodiodes with annealed Ir/Pt semi-transparent contacts

P. C. Chang; C. L. Yu; S. J. Chang; C. H. Liu

doi:10.1016/j.tsf.2007.10.006

GaN Schottky photodiodes with annealed Ir/Pt semi-transparent contacts

P. C. Chang, C. L. Yu, S. J. Chang, C. H. Liu

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We have fabricated the Schottky photodiodes on GaN epitaxial wafer by using Ir/Pt contact. It was found that the transmittance of Ir/Pt film increased while the dark current became significantly smaller after annealing. The leakage current after annealing in O₂ was shown to be about four orders of magnitude smaller than that without annealing. With a - 6 V applied bias, it was found that the photocurrent to dark current contrast ratio and the maximum responsivity were 4.03 × 10⁴ and 0.189 A/W for photodiodes after annealing at 600 °C.

Original language	English
Pages (from-to)	3324-3327
Number of pages	4
Journal	Thin Solid Films
Volume	516
Issue number	10
DOIs	https://doi.org/10.1016/j.tsf.2007.10.006
Publication status	Published - 2008 Mar 31

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2007.10.006

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title = "GaN Schottky photodiodes with annealed Ir/Pt semi-transparent contacts",

abstract = "We have fabricated the Schottky photodiodes on GaN epitaxial wafer by using Ir/Pt contact. It was found that the transmittance of Ir/Pt film increased while the dark current became significantly smaller after annealing. The leakage current after annealing in O2 was shown to be about four orders of magnitude smaller than that without annealing. With a - 6 V applied bias, it was found that the photocurrent to dark current contrast ratio and the maximum responsivity were 4.03 × 104 and 0.189 A/W for photodiodes after annealing at 600 °C.",

author = "Chang, {P. C.} and Yu, {C. L.} and Chang, {S. J.} and Liu, {C. H.}",

note = "Funding Information: This work was supported by the National Science Council under contract number NSC 96-2221-E-232-004. ",

year = "2008",

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doi = "10.1016/j.tsf.2007.10.006",

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T1 - GaN Schottky photodiodes with annealed Ir/Pt semi-transparent contacts

AU - Chang, P. C.

AU - Yu, C. L.

AU - Chang, S. J.

AU - Liu, C. H.

N1 - Funding Information: This work was supported by the National Science Council under contract number NSC 96-2221-E-232-004.

PY - 2008/3/31

Y1 - 2008/3/31

N2 - We have fabricated the Schottky photodiodes on GaN epitaxial wafer by using Ir/Pt contact. It was found that the transmittance of Ir/Pt film increased while the dark current became significantly smaller after annealing. The leakage current after annealing in O2 was shown to be about four orders of magnitude smaller than that without annealing. With a - 6 V applied bias, it was found that the photocurrent to dark current contrast ratio and the maximum responsivity were 4.03 × 104 and 0.189 A/W for photodiodes after annealing at 600 °C.

AB - We have fabricated the Schottky photodiodes on GaN epitaxial wafer by using Ir/Pt contact. It was found that the transmittance of Ir/Pt film increased while the dark current became significantly smaller after annealing. The leakage current after annealing in O2 was shown to be about four orders of magnitude smaller than that without annealing. With a - 6 V applied bias, it was found that the photocurrent to dark current contrast ratio and the maximum responsivity were 4.03 × 104 and 0.189 A/W for photodiodes after annealing at 600 °C.

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DO - 10.1016/j.tsf.2007.10.006

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SN - 0040-6090

VL - 516

SP - 3324

EP - 3327

JO - Thin Solid Films

JF - Thin Solid Films

IS - 10

ER -

GaN Schottky photodiodes with annealed Ir/Pt semi-transparent contacts

Abstract

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