The epitaxial GaN submicron rods on Si(100)/SiO2/graphene were grown by metal-organic chemical vapor deposition (MOCVD) and employed as nonenzymatic amperometric glucose sensor for the first time. The results showed that the Si(100)/SiO2/grapheme/GaN glucose sensor had high sensitivity of 57.7 μA/cm2-mM, low response time of around 4.5 s, and long lifetime of over 30 days. Non-enzymatic glucose sensors based on GaN/graphene have therefore been systematically proven to be efficient and stable.
All Science Journal Classification (ASJC) codes
- Materials Science(all)