GaN ultraviolet photodetector with a low-temperature AlN cap layer

S. J. Chang; C. L. Yu; P. C. Chang; Y. C. Lin

doi:10.1149/1.2722039

GaN ultraviolet photodetector with a low-temperature AlN cap layer

S. J. Chang, C. L. Yu, P. C. Chang, Y. C. Lin

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We present the characteristics of GaN ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT)-AlN cap layer. With the LT-AlN cap layer, it was found that reverse leakage current became smaller by four orders of magnitude. With an incident wavelength of 360 nm, it was found that the responsivity under zero bias for the proposed PD was 0.063 AW, which corresponds to a quantum efficiency of 21.7%. Furthermore, it was found that the UV to visible rejection ratio of the PD with a LT-AlN cap layer was larger than that of a conventional Schottky barrier PD.

Original language	English
Pages (from-to)	196-198
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	10
Issue number	6
DOIs	https://doi.org/10.1149/1.2722039
Publication status	Published - 2007

All Science Journal Classification (ASJC) codes

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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abstract = "We present the characteristics of GaN ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT)-AlN cap layer. With the LT-AlN cap layer, it was found that reverse leakage current became smaller by four orders of magnitude. With an incident wavelength of 360 nm, it was found that the responsivity under zero bias for the proposed PD was 0.063 AW, which corresponds to a quantum efficiency of 21.7%. Furthermore, it was found that the UV to visible rejection ratio of the PD with a LT-AlN cap layer was larger than that of a conventional Schottky barrier PD.",

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AU - Chang, S. J.

AU - Yu, C. L.

AU - Chang, P. C.

AU - Lin, Y. C.

PY - 2007

Y1 - 2007

N2 - We present the characteristics of GaN ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT)-AlN cap layer. With the LT-AlN cap layer, it was found that reverse leakage current became smaller by four orders of magnitude. With an incident wavelength of 360 nm, it was found that the responsivity under zero bias for the proposed PD was 0.063 AW, which corresponds to a quantum efficiency of 21.7%. Furthermore, it was found that the UV to visible rejection ratio of the PD with a LT-AlN cap layer was larger than that of a conventional Schottky barrier PD.

AB - We present the characteristics of GaN ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT)-AlN cap layer. With the LT-AlN cap layer, it was found that reverse leakage current became smaller by four orders of magnitude. With an incident wavelength of 360 nm, it was found that the responsivity under zero bias for the proposed PD was 0.063 AW, which corresponds to a quantum efficiency of 21.7%. Furthermore, it was found that the UV to visible rejection ratio of the PD with a LT-AlN cap layer was larger than that of a conventional Schottky barrier PD.

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JF - Electrochemical and Solid-State Letters

IS - 6

ER -

GaN ultraviolet photodetector with a low-temperature AlN cap layer

Abstract

All Science Journal Classification (ASJC) codes

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