GaN ultraviolet photodetector with a low-temperature AlN cap layer

S. J. Chang, C. L. Yu, P. C. Chang, Y. C. Lin

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We present the characteristics of GaN ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT)-AlN cap layer. With the LT-AlN cap layer, it was found that reverse leakage current became smaller by four orders of magnitude. With an incident wavelength of 360 nm, it was found that the responsivity under zero bias for the proposed PD was 0.063 AW, which corresponds to a quantum efficiency of 21.7%. Furthermore, it was found that the UV to visible rejection ratio of the PD with a LT-AlN cap layer was larger than that of a conventional Schottky barrier PD.

Original languageEnglish
Pages (from-to)196-198
Number of pages3
JournalElectrochemical and Solid-State Letters
Issue number6
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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