GaN UV photodetector by using transparency antimony-doped tin oxide electrode

Ming Lung Tu, Yan Kuin Su, Shoou-Jinn Chang, Wen-Kuei Chuang

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors with antimony-doped tin oxide (ATO) transparent electrodes were fabricated and characterized. The ATO films with the thickness of 750 nm were deposited on GaN substrates by RF magnetron sputtering. The main X-ray peak of ATO film was identified as (1 0 1) using the X-ray diffraction (XRD) technique. The barrier height between ATO and GaN was determined to be 1.12 eV. Finally, the responsivity of undoped GaN-based MSM photodetectors with ATO electrodes measured at 325 nm under the bias voltage of 1 and 5 V was 0.051 and 0.095 A W-1, respectively.

Original languageEnglish
Pages (from-to)744-747
Number of pages4
JournalJournal of Crystal Growth
Volume298
Issue numberSPEC. ISS
DOIs
Publication statusPublished - 2007 Jan 1

Fingerprint

Antimony
Photodetectors
antimony
Tin oxides
Transparency
tin oxides
photometers
Electrodes
Metals
electrodes
metals
Oxide films
oxide films
Semiconductor materials
Bias voltage
Magnetron sputtering
magnetron sputtering
x rays
stannic oxide
X ray diffraction

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

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title = "GaN UV photodetector by using transparency antimony-doped tin oxide electrode",
abstract = "GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors with antimony-doped tin oxide (ATO) transparent electrodes were fabricated and characterized. The ATO films with the thickness of 750 nm were deposited on GaN substrates by RF magnetron sputtering. The main X-ray peak of ATO film was identified as (1 0 1) using the X-ray diffraction (XRD) technique. The barrier height between ATO and GaN was determined to be 1.12 eV. Finally, the responsivity of undoped GaN-based MSM photodetectors with ATO electrodes measured at 325 nm under the bias voltage of 1 and 5 V was 0.051 and 0.095 A W-1, respectively.",
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GaN UV photodetector by using transparency antimony-doped tin oxide electrode. / Tu, Ming Lung; Su, Yan Kuin; Chang, Shoou-Jinn; Chuang, Wen-Kuei.

In: Journal of Crystal Growth, Vol. 298, No. SPEC. ISS, 01.01.2007, p. 744-747.

Research output: Contribution to journalArticle

TY - JOUR

T1 - GaN UV photodetector by using transparency antimony-doped tin oxide electrode

AU - Tu, Ming Lung

AU - Su, Yan Kuin

AU - Chang, Shoou-Jinn

AU - Chuang, Wen-Kuei

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AB - GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors with antimony-doped tin oxide (ATO) transparent electrodes were fabricated and characterized. The ATO films with the thickness of 750 nm were deposited on GaN substrates by RF magnetron sputtering. The main X-ray peak of ATO film was identified as (1 0 1) using the X-ray diffraction (XRD) technique. The barrier height between ATO and GaN was determined to be 1.12 eV. Finally, the responsivity of undoped GaN-based MSM photodetectors with ATO electrodes measured at 325 nm under the bias voltage of 1 and 5 V was 0.051 and 0.095 A W-1, respectively.

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