GaN/AlGaN two-dimensional electron gas grown by ammonia-MBE on MOCVD GaN template

Haipeng Tang, J. B. Webb, S. Rolfe, J. A. Bardwell, D. Tomka, P. Coleridge, C. H. Ko, Y. K. Su, S. J. Chang

Research output: Contribution to journalArticlepeer-review

Abstract

The growth of high quality GaN/AlGaN two-dimensional electron gas on MOCVD GaN template substrates by ammonia-MBE is reported. The homoepitaxial growth required a significantly lower growth temperature than that needed for growth on SiC or sapphire substrates, and yielded significantly improved surface smoothness, and consequently improved electrical, characteristics of the two-dimensional electron gas. A low temperature Hall mobility of 14300 cm2/V s and quantum moblity of 2000 cm2/V s were obtained, representing the highest values observed in the GaN/AlGaN structures grown by the ammonia-MBE technique. A correlation between the surface roughness and increased Hall mobility to quantum mobility ratio was observed, suggesting that the surface roughness could be a source of small-angle scattering in these structures.

Original languageEnglish
Pages (from-to)822-825
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume234
Issue number3
DOIs
Publication statusPublished - 2002 Dec

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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