GaN/Si(111) epilayer based on low temperature Al/N and AlGaN/GaN superlattice for light emitting diodes

G. M. Wu, C. W. Tsai, C. F. Shih, N. C. Chen, W. H. Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The various buffer layer structures have been investigated to decrease the dislocation density of GaN/Si(111) epilayer for light emitting diodes using TEM, SEM and double crystal X-ray diffraction. Low temperature AlN/AlGaN with 10 period AlGaN/GaN superlattice has been shown to be effective in reducing the dislocation density and can improve the crystal quality. The full width at half maximum (FWHM) is 611 arcsec. The surface pit density is greatly reduced and the GaN/Si(111) epilayer is free of crack. In addition, the dislocation bending and pairing with equivalent neighboring dislocation is responsible for reducing the dislocation density.

Original languageEnglish
Title of host publicationNanoscience and Technology
PublisherTrans Tech Publications Ltd
Pages587-590
Number of pages4
EditionPART 1
ISBN (Print)3908451302, 9783908451303
DOIs
Publication statusPublished - 2007 Jan 1
EventChina International Conference on Nanoscience and Technology, ChinaNANO 2005 - Beijing, China
Duration: 2005 Jun 92005 Jun 11

Publication series

NameSolid State Phenomena
NumberPART 1
Volume121-123
ISSN (Print)1012-0394

Other

OtherChina International Conference on Nanoscience and Technology, ChinaNANO 2005
CountryChina
CityBeijing
Period05-06-0905-06-11

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'GaN/Si(111) epilayer based on low temperature Al/N and AlGaN/GaN superlattice for light emitting diodes'. Together they form a unique fingerprint.

  • Cite this

    Wu, G. M., Tsai, C. W., Shih, C. F., Chen, N. C., & Feng, W. H. (2007). GaN/Si(111) epilayer based on low temperature Al/N and AlGaN/GaN superlattice for light emitting diodes. In Nanoscience and Technology (PART 1 ed., pp. 587-590). (Solid State Phenomena; Vol. 121-123, No. PART 1). Trans Tech Publications Ltd. https://doi.org/10.4028/3-908451-30-2.587