GaN/Si(111) epilayer based on low temperature Al/N and AlGaN/GaN superlattice for light emitting diodes

G. M. Wu, C. W. Tsai, C. F. Shih, N. C. Chen, W. H. Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Fingerprint

Dive into the research topics of 'GaN/Si(111) epilayer based on low temperature Al/N and AlGaN/GaN superlattice for light emitting diodes'. Together they form a unique fingerprint.

Engineering & Materials Science

Physics & Astronomy

Chemical Compounds