Gas cluster ion beam application to porous low-k dielectrics

John Hautala, Greg Book, Brian White, Chris Doughty, Dung-Ching Perng, Terukazu Kokubo

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Abstract

Applications of gas cluster ion beams (GCIB) to sealing of pores in low-k and ultra-low-k materials are reported. Application of GCIB to porous low-k materials results in the formation of a very thin dense surface layer with optical properties similar to SiO 2. This layer forms an effective metal diffusion barrier to TiSiN chemical vapor deposition. Use of an oxygen-containing cluster beam allows for simultaneous photoresist ashing and pore sealing.

Original languageEnglish
Pages (from-to)461-467
Number of pages7
JournalAdvanced Metallization Conference (AMC)
Publication statusPublished - 2003 Dec 1
EventAdvanced Metallization Conference 2003, AMC 2003 - Montreal, Que., Canada
Duration: 2003 Oct 212003 Oct 23

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)

Fingerprint Dive into the research topics of 'Gas cluster ion beam application to porous low-k dielectrics'. Together they form a unique fingerprint.

Cite this