Gas cluster ion beam application to porous low-k dielectrics

John Hautala, Greg Book, Brian White, Chris Doughty, Dung-Ching Perng, Terukazu Kokubo

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Applications of gas cluster ion beams (GCIB) to sealing of pores in low-k and ultra-low-k materials are reported. Application of GCIB to porous low-k materials results in the formation of a very thin dense surface layer with optical properties similar to SiO 2. This layer forms an effective metal diffusion barrier to TiSiN chemical vapor deposition. Use of an oxygen-containing cluster beam allows for simultaneous photoresist ashing and pore sealing.

Original languageEnglish
Pages (from-to)461-467
Number of pages7
JournalAdvanced Metallization Conference (AMC)
Publication statusPublished - 2003 Dec 1
EventAdvanced Metallization Conference 2003, AMC 2003 - Montreal, Que., Canada
Duration: 2003 Oct 212003 Oct 23

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Ion beams
Gases
Diffusion barriers
Photoresists
Chemical vapor deposition
Optical properties
Metals
Oxygen
Low-k dielectric

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)

Cite this

Hautala, J., Book, G., White, B., Doughty, C., Perng, D-C., & Kokubo, T. (2003). Gas cluster ion beam application to porous low-k dielectrics. Advanced Metallization Conference (AMC), 461-467.
Hautala, John ; Book, Greg ; White, Brian ; Doughty, Chris ; Perng, Dung-Ching ; Kokubo, Terukazu. / Gas cluster ion beam application to porous low-k dielectrics. In: Advanced Metallization Conference (AMC). 2003 ; pp. 461-467.
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Hautala, J, Book, G, White, B, Doughty, C, Perng, D-C & Kokubo, T 2003, 'Gas cluster ion beam application to porous low-k dielectrics', Advanced Metallization Conference (AMC), pp. 461-467.

Gas cluster ion beam application to porous low-k dielectrics. / Hautala, John; Book, Greg; White, Brian; Doughty, Chris; Perng, Dung-Ching; Kokubo, Terukazu.

In: Advanced Metallization Conference (AMC), 01.12.2003, p. 461-467.

Research output: Contribution to journalConference article

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T1 - Gas cluster ion beam application to porous low-k dielectrics

AU - Hautala, John

AU - Book, Greg

AU - White, Brian

AU - Doughty, Chris

AU - Perng, Dung-Ching

AU - Kokubo, Terukazu

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N2 - Applications of gas cluster ion beams (GCIB) to sealing of pores in low-k and ultra-low-k materials are reported. Application of GCIB to porous low-k materials results in the formation of a very thin dense surface layer with optical properties similar to SiO 2. This layer forms an effective metal diffusion barrier to TiSiN chemical vapor deposition. Use of an oxygen-containing cluster beam allows for simultaneous photoresist ashing and pore sealing.

AB - Applications of gas cluster ion beams (GCIB) to sealing of pores in low-k and ultra-low-k materials are reported. Application of GCIB to porous low-k materials results in the formation of a very thin dense surface layer with optical properties similar to SiO 2. This layer forms an effective metal diffusion barrier to TiSiN chemical vapor deposition. Use of an oxygen-containing cluster beam allows for simultaneous photoresist ashing and pore sealing.

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