Gas cluster ion beam application to porous low-k dielectrics

John Hautala; Greg Book; Brian White; Chris Doughty; Dung Ching Perng; Terukazu Kokubo

Gas cluster ion beam application to porous low-k dielectrics

John Hautala, Greg Book, Brian White, Chris Doughty, Dung Ching Perng, Terukazu Kokubo

Department of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

Applications of gas cluster ion beams (GCIB) to sealing of pores in low-k and ultra-low-k materials are reported. Application of GCIB to porous low-k materials results in the formation of a very thin dense surface layer with optical properties similar to SiO ₂. This layer forms an effective metal diffusion barrier to TiSiN chemical vapor deposition. Use of an oxygen-containing cluster beam allows for simultaneous photoresist ashing and pore sealing.

Original language	English
Pages (from-to)	461-467
Number of pages	7
Journal	Advanced Metallization Conference (AMC)
Publication status	Published - 2003
Event	Advanced Metallization Conference 2003, AMC 2003 - Montreal, Que., Canada Duration: 2003 Oct 21 → 2003 Oct 23

All Science Journal Classification (ASJC) codes

General Chemical Engineering

Cite this

@article{91c1de7d59a3443b8bb11482ca580f73,

title = "Gas cluster ion beam application to porous low-k dielectrics",

abstract = "Applications of gas cluster ion beams (GCIB) to sealing of pores in low-k and ultra-low-k materials are reported. Application of GCIB to porous low-k materials results in the formation of a very thin dense surface layer with optical properties similar to SiO 2. This layer forms an effective metal diffusion barrier to TiSiN chemical vapor deposition. Use of an oxygen-containing cluster beam allows for simultaneous photoresist ashing and pore sealing.",

author = "John Hautala and Greg Book and Brian White and Chris Doughty and Perng, {Dung Ching} and Terukazu Kokubo",

year = "2003",

language = "English",

pages = "461--467",

journal = "Advanced Metallization Conference (AMC)",

issn = "1540-1766",

note = "Advanced Metallization Conference 2003, AMC 2003 ; Conference date: 21-10-2003 Through 23-10-2003",

}

TY - JOUR

T1 - Gas cluster ion beam application to porous low-k dielectrics

AU - Hautala, John

AU - Book, Greg

AU - White, Brian

AU - Doughty, Chris

AU - Perng, Dung Ching

AU - Kokubo, Terukazu

PY - 2003

Y1 - 2003

N2 - Applications of gas cluster ion beams (GCIB) to sealing of pores in low-k and ultra-low-k materials are reported. Application of GCIB to porous low-k materials results in the formation of a very thin dense surface layer with optical properties similar to SiO 2. This layer forms an effective metal diffusion barrier to TiSiN chemical vapor deposition. Use of an oxygen-containing cluster beam allows for simultaneous photoresist ashing and pore sealing.

AB - Applications of gas cluster ion beams (GCIB) to sealing of pores in low-k and ultra-low-k materials are reported. Application of GCIB to porous low-k materials results in the formation of a very thin dense surface layer with optical properties similar to SiO 2. This layer forms an effective metal diffusion barrier to TiSiN chemical vapor deposition. Use of an oxygen-containing cluster beam allows for simultaneous photoresist ashing and pore sealing.

UR - http://www.scopus.com/inward/record.url?scp=23844500653&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=23844500653&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:23844500653

SN - 1540-1766

SP - 461

EP - 467

JO - Advanced Metallization Conference (AMC)

JF - Advanced Metallization Conference (AMC)

T2 - Advanced Metallization Conference 2003, AMC 2003

Y2 - 21 October 2003 through 23 October 2003

ER -

Gas cluster ion beam application to porous low-k dielectrics

Abstract

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this