Abstract
Defects, such as cracks, porous structure, small grains that easily occur in the fabrication of copper indium gallium selenide (CIGS) thin film absorbers using non-vacuum process have been the major obstacle to practical application of this technology so far. A gas-pressure assisted sintering process has been developed to achieve dense, crack-free, large-grained CIGS films. The gas-pressure assisted sintering effects on the microstructure, crystalline, and electric properties were investigated by scanning electron microscopy, X-ray diffraction, and Hall-effect analyzer. A uniform microstructure with a large grain size and small amount of isolated residual pores and good electric properties can be obtained by pre-sintering at 500°C under 6 bar N2 overpressure and then annealing at 500°C for 20 minutes under a selenium atmosphere.
| Original language | English |
|---|---|
| Pages (from-to) | 1548-1552 |
| Number of pages | 5 |
| Journal | Journal of the American Ceramic Society |
| Volume | 102 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2019 Apr |
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All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Materials Chemistry
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Gas-pressure assisted sintering of copper indium gallium selenide thin films. / Wu, Yu Chien; Yang, Chang Ting; Sun, Manting; Hsiang, Hsing I.
In: Journal of the American Ceramic Society, Vol. 102, No. 4, 04.2019, p. 1548-1552.Research output: Contribution to journal › Article
TY - JOUR
T1 - Gas-pressure assisted sintering of copper indium gallium selenide thin films
AU - Wu, Yu Chien
AU - Yang, Chang Ting
AU - Sun, Manting
AU - Hsiang, Hsing I.
PY - 2019/4
Y1 - 2019/4
N2 - Defects, such as cracks, porous structure, small grains that easily occur in the fabrication of copper indium gallium selenide (CIGS) thin film absorbers using non-vacuum process have been the major obstacle to practical application of this technology so far. A gas-pressure assisted sintering process has been developed to achieve dense, crack-free, large-grained CIGS films. The gas-pressure assisted sintering effects on the microstructure, crystalline, and electric properties were investigated by scanning electron microscopy, X-ray diffraction, and Hall-effect analyzer. A uniform microstructure with a large grain size and small amount of isolated residual pores and good electric properties can be obtained by pre-sintering at 500°C under 6 bar N2 overpressure and then annealing at 500°C for 20 minutes under a selenium atmosphere.
AB - Defects, such as cracks, porous structure, small grains that easily occur in the fabrication of copper indium gallium selenide (CIGS) thin film absorbers using non-vacuum process have been the major obstacle to practical application of this technology so far. A gas-pressure assisted sintering process has been developed to achieve dense, crack-free, large-grained CIGS films. The gas-pressure assisted sintering effects on the microstructure, crystalline, and electric properties were investigated by scanning electron microscopy, X-ray diffraction, and Hall-effect analyzer. A uniform microstructure with a large grain size and small amount of isolated residual pores and good electric properties can be obtained by pre-sintering at 500°C under 6 bar N2 overpressure and then annealing at 500°C for 20 minutes under a selenium atmosphere.
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U2 - 10.1111/jace.16216
DO - 10.1111/jace.16216
M3 - Article
AN - SCOPUS:85057715119
VL - 102
SP - 1548
EP - 1552
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
SN - 0002-7820
IS - 4
ER -