TY - GEN
T1 - Gas sensing properties of ZnO
T2 - 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
AU - Lay, Gaik Teoh
AU - Hong, Ming Chen
AU - Su, Yen-Hsun
AU - Wei, Hao Lai
AU - Shih, Min Chou
AU - Min, Hsiung Hon
PY - 2006/12/1
Y1 - 2006/12/1
N2 - The ZnO:Al thin films were prepared by RF magnetron sputtering on Si substrate using Pt as interdigitated electrodes. The structure was characterized by XRD and SEM analyses, and the ethanol vapor gas sensing as well as electrical properties have been investigated and discussed. The gas sensing results show that the sensitivity for detecting 400 ppm ethanol vapor was ∼20 at an operating temperature of 250. The high sensitivity, fast recovery, and reliability suggest that ZnO: Al thin film prepared by RF magnetron sputtering can be used for ethanol vapor gas sensing.
AB - The ZnO:Al thin films were prepared by RF magnetron sputtering on Si substrate using Pt as interdigitated electrodes. The structure was characterized by XRD and SEM analyses, and the ethanol vapor gas sensing as well as electrical properties have been investigated and discussed. The gas sensing results show that the sensitivity for detecting 400 ppm ethanol vapor was ∼20 at an operating temperature of 250. The high sensitivity, fast recovery, and reliability suggest that ZnO: Al thin film prepared by RF magnetron sputtering can be used for ethanol vapor gas sensing.
UR - http://www.scopus.com/inward/record.url?scp=35148816217&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=35148816217&partnerID=8YFLogxK
U2 - 10.1109/SMELEC.2006.381036
DO - 10.1109/SMELEC.2006.381036
M3 - Conference contribution
AN - SCOPUS:35148816217
SN - 0780397312
SN - 9780780397316
T3 - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
SP - 142
EP - 145
BT - ICSE 2006
Y2 - 29 November 2006 through 1 December 2006
ER -