Gas sensing properties of ZnO: Al thin films prepared by RF magnetron sputtering

Gaik Teoh Lay, Ming Chen Hong, Yen-Hsun Su, Hao Lai Wei, Min Chou Shih, Hsiung Hon Min

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The ZnO:Al thin films were prepared by RF magnetron sputtering on Si substrate using Pt as interdigitated electrodes. The structure was characterized by XRD and SEM analyses, and the ethanol vapor gas sensing as well as electrical properties have been investigated and discussed. The gas sensing results show that the sensitivity for detecting 400 ppm ethanol vapor was ∼20 at an operating temperature of 250. The high sensitivity, fast recovery, and reliability suggest that ZnO: Al thin film prepared by RF magnetron sputtering can be used for ethanol vapor gas sensing.

Original languageEnglish
Title of host publicationICSE 2006
Subtitle of host publication2006 IEEE International Conference on Semiconductor Electronics, Proceedings
Pages142-145
Number of pages4
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia
Duration: 2006 Nov 292006 Dec 1

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Other

Other2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
CountryMalaysia
CityKuala Lumpur
Period06-11-2906-12-01

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Lay, G. T., Hong, M. C., Su, Y-H., Wei, H. L., Shih, M. C., & Min, H. H. (2006). Gas sensing properties of ZnO: Al thin films prepared by RF magnetron sputtering. In ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings (pp. 142-145). [4266586] (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2006.381036