Freestanding Si nano-wires were grown by gas source molecular beam epitaxy on Au/Si (100), (111), (110), and (113) substrates. The morphology of Si nano-wires is investigated using scanning electron microscopy. This method provides a possible way to fabricate silicon quantum wires.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering