Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate

J. L. Liu; S. J. Cai; G. L. Jin; Y. S. Tang; K. L. Wang

doi:10.1006/spmi.1998.0678

Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate

J. L. Liu, S. J. Cai, G. L. Jin, Y. S. Tang, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Freestanding Si nano-wires were grown by gas source molecular beam epitaxy on Au/Si (100), (111), (110), and (113) substrates. The morphology of Si nano-wires is investigated using scanning electron microscopy. This method provides a possible way to fabricate silicon quantum wires.

Original language	English
Pages (from-to)	477-479
Number of pages	3
Journal	Superlattices and Microstructures
Volume	25
Issue number	1-2
DOIs	https://doi.org/10.1006/spmi.1998.0678
Publication status	Published - 1999 Jan

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1006/spmi.1998.0678

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title = "Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate",

abstract = "Freestanding Si nano-wires were grown by gas source molecular beam epitaxy on Au/Si (100), (111), (110), and (113) substrates. The morphology of Si nano-wires is investigated using scanning electron microscopy. This method provides a possible way to fabricate silicon quantum wires.",

author = "Liu, {J. L.} and Cai, {S. J.} and Jin, {G. L.} and Tang, {Y. S.} and Wang, {K. L.}",

note = "Funding Information: Acknowledgements—We are indebted to Drs Houjun and Johnson for the SEM measurements. This work was in part supported by the Semiconductor Research Corporation (SJ-088) and the National Science Foundation (DMR-9520893).",

year = "1999",

month = jan,

doi = "10.1006/spmi.1998.0678",

language = "English",

volume = "25",

pages = "477--479",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

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T1 - Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate

AU - Liu, J. L.

AU - Cai, S. J.

AU - Jin, G. L.

AU - Tang, Y. S.

AU - Wang, K. L.

N1 - Funding Information: Acknowledgements—We are indebted to Drs Houjun and Johnson for the SEM measurements. This work was in part supported by the Semiconductor Research Corporation (SJ-088) and the National Science Foundation (DMR-9520893).

PY - 1999/1

Y1 - 1999/1

N2 - Freestanding Si nano-wires were grown by gas source molecular beam epitaxy on Au/Si (100), (111), (110), and (113) substrates. The morphology of Si nano-wires is investigated using scanning electron microscopy. This method provides a possible way to fabricate silicon quantum wires.

AB - Freestanding Si nano-wires were grown by gas source molecular beam epitaxy on Au/Si (100), (111), (110), and (113) substrates. The morphology of Si nano-wires is investigated using scanning electron microscopy. This method provides a possible way to fabricate silicon quantum wires.

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DO - 10.1006/spmi.1998.0678

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EP - 479

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 1-2

ER -

Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate

Abstract

All Science Journal Classification (ASJC) codes

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