Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate

J. L. Liu, S. J. Cai, G. L. Jin, Y. S. Tang, K. L. Wang

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


Freestanding Si nano-wires were grown by gas source molecular beam epitaxy on Au/Si (100), (111), (110), and (113) substrates. The morphology of Si nano-wires is investigated using scanning electron microscopy. This method provides a possible way to fabricate silicon quantum wires.

Original languageEnglish
Pages (from-to)477-479
Number of pages3
JournalSuperlattices and Microstructures
Issue number1-2
Publication statusPublished - 1999 Jan

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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