GaSb/InAs superlattice structure for normal incidence intersubband infrared photodetectors

M. P. Houng, Y. H. Wang, H. H. Chen, Yia Chung Chang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


The electric field dependence of the p-GaSb/InAs superlattice optical transitions are studied based on the bond orbital model. It shows for increasing electric field the absorption peak near 10μm is slightly shifted to higher energy and the absorption coefficient is decreased for incident light with x-polarization, whereas the field dependence is weaker for incident light with z-polarization. Squared optical matrix elements show that two major contributions from HH1-LH1 and HH1-HH2 transition dominate the absorption near 10μm for light polarized along x and z direction with and without external electric field.

Original languageEnglish
Pages (from-to)181-184
Number of pages4
JournalSuperlattices and Microstructures
Issue number2
Publication statusPublished - 1993 Mar

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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