GaSb/InAs superlattice structure for normal incidence intersubband infrared photodetectors

M. P. Houng; Y. H. Wang; H. H. Chen; Yia Chung Chang

doi:10.1006/spmi.1993.1034

GaSb/InAs superlattice structure for normal incidence intersubband infrared photodetectors

M. P. Houng, Y. H. Wang, H. H. Chen, Yia Chung Chang

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The electric field dependence of the p-GaSb/InAs superlattice optical transitions are studied based on the bond orbital model. It shows for increasing electric field the absorption peak near 10μm is slightly shifted to higher energy and the absorption coefficient is decreased for incident light with x-polarization, whereas the field dependence is weaker for incident light with z-polarization. Squared optical matrix elements show that two major contributions from HH1-LH1 and HH1-HH2 transition dominate the absorption near 10μm for light polarized along x and z direction with and without external electric field.

Original language	English
Pages (from-to)	181-184
Number of pages	4
Journal	Superlattices and Microstructures
Volume	13
Issue number	2
DOIs	https://doi.org/10.1006/spmi.1993.1034
Publication status	Published - 1993 Mar

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1006/spmi.1993.1034

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title = "GaSb/InAs superlattice structure for normal incidence intersubband infrared photodetectors",

abstract = "The electric field dependence of the p-GaSb/InAs superlattice optical transitions are studied based on the bond orbital model. It shows for increasing electric field the absorption peak near 10μm is slightly shifted to higher energy and the absorption coefficient is decreased for incident light with x-polarization, whereas the field dependence is weaker for incident light with z-polarization. Squared optical matrix elements show that two major contributions from HH1-LH1 and HH1-HH2 transition dominate the absorption near 10μm for light polarized along x and z direction with and without external electric field.",

author = "Houng, {M. P.} and Wang, {Y. H.} and Chen, {H. H.} and Chang, {Yia Chung}",

year = "1993",

month = mar,

doi = "10.1006/spmi.1993.1034",

language = "English",

volume = "13",

pages = "181--184",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

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TY - JOUR

T1 - GaSb/InAs superlattice structure for normal incidence intersubband infrared photodetectors

AU - Houng, M. P.

AU - Wang, Y. H.

AU - Chen, H. H.

AU - Chang, Yia Chung

PY - 1993/3

Y1 - 1993/3

N2 - The electric field dependence of the p-GaSb/InAs superlattice optical transitions are studied based on the bond orbital model. It shows for increasing electric field the absorption peak near 10μm is slightly shifted to higher energy and the absorption coefficient is decreased for incident light with x-polarization, whereas the field dependence is weaker for incident light with z-polarization. Squared optical matrix elements show that two major contributions from HH1-LH1 and HH1-HH2 transition dominate the absorption near 10μm for light polarized along x and z direction with and without external electric field.

AB - The electric field dependence of the p-GaSb/InAs superlattice optical transitions are studied based on the bond orbital model. It shows for increasing electric field the absorption peak near 10μm is slightly shifted to higher energy and the absorption coefficient is decreased for incident light with x-polarization, whereas the field dependence is weaker for incident light with z-polarization. Squared optical matrix elements show that two major contributions from HH1-LH1 and HH1-HH2 transition dominate the absorption near 10μm for light polarized along x and z direction with and without external electric field.

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DO - 10.1006/spmi.1993.1034

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SN - 0749-6036

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SP - 181

EP - 184

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 2

ER -

GaSb/InAs superlattice structure for normal incidence intersubband infrared photodetectors

Abstract

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