Ga2/ O3/AlGaN/GaN Heterostructure Ultraviolet Three-Band Photodetector

Zheng Da Huang, Wen Yin Weng, Shoou Jinn Chang, Chiu Jung Chiu, Ting Jen Hsueh, San Lein Wu

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

β Ga3 O3/AlGaN/GaN heterostructure three-band photodetectors (PDs) are fabricated and operated in ultraviolet (UV)-A, UV-B, and UV-C regions. The operation mode of the device can be switched by changing the applied bias and the thickness of the thin films. The UV-C to UV-B and UV-B to UV-A contrast ratios of the PD with a -1 V applied bias are 14.4 and 2157.9, respectively. The UV-A to visible contrast ratio of the PD with a - 10 V applied bias is 247.9.

Original languageEnglish
Article number6517889
Pages (from-to)3462-3467
Number of pages6
JournalIEEE Sensors Journal
Volume13
Issue number9
DOIs
Publication statusPublished - 2013 Aug 26

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

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