Ga2/ O3/AlGaN/GaN Heterostructure Ultraviolet Three-Band Photodetector

Zheng Da Huang; Wen Yin Weng; Shoou Jinn Chang; Chiu Jung Chiu; Ting Jen Hsueh; San Lein Wu

doi:10.1109/JSEN.2013.2264457

Ga₂/ O₃/AlGaN/GaN Heterostructure Ultraviolet Three-Band Photodetector

Zheng Da Huang, Wen Yin Weng, Shoou Jinn Chang, Chiu Jung Chiu, Ting Jen Hsueh, San Lein Wu

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

β Ga₃ O₃/AlGaN/GaN heterostructure three-band photodetectors (PDs) are fabricated and operated in ultraviolet (UV)-A, UV-B, and UV-C regions. The operation mode of the device can be switched by changing the applied bias and the thickness of the thin films. The UV-C to UV-B and UV-B to UV-A contrast ratios of the PD with a -1 V applied bias are 14.4 and 2157.9, respectively. The UV-A to visible contrast ratio of the PD with a - 10 V applied bias is 247.9.

Original language	English
Article number	6517889
Pages (from-to)	3462-3467
Number of pages	6
Journal	IEEE Sensors Journal
Volume	13
Issue number	9
DOIs	https://doi.org/10.1109/JSEN.2013.2264457
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Instrumentation
Electrical and Electronic Engineering

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title = "Ga2/ O3/AlGaN/GaN Heterostructure Ultraviolet Three-Band Photodetector",

abstract = "β Ga3 O3/AlGaN/GaN heterostructure three-band photodetectors (PDs) are fabricated and operated in ultraviolet (UV)-A, UV-B, and UV-C regions. The operation mode of the device can be switched by changing the applied bias and the thickness of the thin films. The UV-C to UV-B and UV-B to UV-A contrast ratios of the PD with a -1 V applied bias are 14.4 and 2157.9, respectively. The UV-A to visible contrast ratio of the PD with a - 10 V applied bias is 247.9.",

author = "Huang, {Zheng Da} and Weng, {Wen Yin} and Chang, {Shoou Jinn} and Chiu, {Chiu Jung} and Hsueh, {Ting Jen} and Wu, {San Lein}",

year = "2013",

doi = "10.1109/JSEN.2013.2264457",

language = "English",

volume = "13",

pages = "3462--3467",

journal = "IEEE Sensors Journal",

issn = "1530-437X",

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TY - JOUR

T1 - Ga2/ O3/AlGaN/GaN Heterostructure Ultraviolet Three-Band Photodetector

AU - Huang, Zheng Da

AU - Weng, Wen Yin

AU - Chang, Shoou Jinn

AU - Chiu, Chiu Jung

AU - Hsueh, Ting Jen

AU - Wu, San Lein

PY - 2013

Y1 - 2013

N2 - β Ga3 O3/AlGaN/GaN heterostructure three-band photodetectors (PDs) are fabricated and operated in ultraviolet (UV)-A, UV-B, and UV-C regions. The operation mode of the device can be switched by changing the applied bias and the thickness of the thin films. The UV-C to UV-B and UV-B to UV-A contrast ratios of the PD with a -1 V applied bias are 14.4 and 2157.9, respectively. The UV-A to visible contrast ratio of the PD with a - 10 V applied bias is 247.9.

AB - β Ga3 O3/AlGaN/GaN heterostructure three-band photodetectors (PDs) are fabricated and operated in ultraviolet (UV)-A, UV-B, and UV-C regions. The operation mode of the device can be switched by changing the applied bias and the thickness of the thin films. The UV-C to UV-B and UV-B to UV-A contrast ratios of the PD with a -1 V applied bias are 14.4 and 2157.9, respectively. The UV-A to visible contrast ratio of the PD with a - 10 V applied bias is 247.9.

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M3 - Article

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JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

IS - 9

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ER -

Ga₂/ O₃/AlGaN/GaN Heterostructure Ultraviolet Three-Band Photodetector

Abstract

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