Ga₂O₃-based solar-blind deep ultraviolet light-emitting diodes

Vapor cooling condensation system was used to sequentially deposit i-Ga₂O₃ and n-Ga₂O₃:Si films on the p-GaN layer that was grown with a metalorganic chemical vapor deposition system. After it was annealed in a nitrogen ambience at 900 °C for 60 min, the p-GaN/i-Ga₂O₃/n-Ga₂O₃:Si structure was utilized to fabricate Ga₂O₃-based p-i-n solar-blind deep ultraviolet light-emitting diodes (DUV-LEDs). The atomic percentages of gallium, silicon, and oxygen in the annealed n-Ga₂O₃:Si films (as measured by an energy dispersive spectrometer) were 20.73%, 19.85%, and 59.42%, respectively. The electron concentration, electron mobility, and optical bandgap energy of the annealed i-Ga₂O₃ films and the annealed n-Ga₂O₃:Si films were 1.0 × 10¹⁵ cm⁻³ and 2.2 × 10¹⁷ cm⁻³, 16.0 cm²/V-s and 7.8 cm²/V-s, and 4.94 eV and 5.20 eV, respectively. The peak emission wavelength of the aforementioned Ga₂O₃-based p-i-n solar-blind DUV-LEDs was 248 nm.