Ga2O3 films for photoelectrochemical hydrogen generation

Shoou-Jinn Chang, Ya Ling Wu, Wen Yin Weng, Yo Hong Lin, Wei Kang Hsieh, Jinn-Kong Sheu, Cheng Liang Hsu

Research output: Contribution to journalArticle

14 Citations (Scopus)


The authors report the use of RF sputtered Ga2O3 films prepared on SiO2/Si template to serve as the photoelectrode for photoelectrochemical (PEC) water splitting. It was found that photocurrent observed from the 900°C-annealed Ga2O3 film was more than 3 orders of magnitude larger than its dark current at zero bias voltage. It was also found that no decomposition and/or corrosion occurred on the surface of the 900°C-annealed Ga2O3 film. This suggests that Ga2O3 film has the potential to serve as a reliable photocathode for hydrogen generation.

Original languageEnglish
JournalJournal of the Electrochemical Society
Issue number9
Publication statusPublished - 2014 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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