The authors report the growth of β-Ga2O3 nanowires using a vapor phase transport method on SiO2/Si template. It is found that average diameter, average length, and density of the nanowires all increased as we increase the growth temperature. β-Ga2O 3 nanowire solar-blind photodetectors with a sharp cutoff at 255 nm are also fabricated. With an incident light wavelength of 255 nm and an applied bias of 5 V, it is found that measured responsivity of the photodetector prepared at 950 °C is 3.43 × 10?3 A/W.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering