Ga2O3 nanowire photodetector prepared on SiO 2/Si template

Y. L. Wu; Shoou Jinn Chang; W. Y. Weng; C. H. Liu; T. Y. Tsai; C. L. Hsu; K. C. Chen

doi:10.1109/JSEN.2013.2247996

Ga₂O₃ nanowire photodetector prepared on SiO ₂/Si template

Y. L. Wu, Shoou Jinn Chang, W. Y. Weng, C. H. Liu, T. Y. Tsai, C. L. Hsu, K. C. Chen

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

The authors report the growth of β-Ga₂O₃ nanowires using a vapor phase transport method on SiO₂/Si template. It is found that average diameter, average length, and density of the nanowires all increased as we increase the growth temperature. β-Ga₂O ₃ nanowire solar-blind photodetectors with a sharp cutoff at 255 nm are also fabricated. With an incident light wavelength of 255 nm and an applied bias of 5 V, it is found that measured responsivity of the photodetector prepared at 950 °C is 3.43 × 10^?3 A/W.

Original language	English
Article number	6466350
Pages (from-to)	2368-2373
Number of pages	6
Journal	IEEE Sensors Journal
Volume	13
Issue number	6
DOIs	https://doi.org/10.1109/JSEN.2013.2247996
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Instrumentation
Electrical and Electronic Engineering

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10.1109/JSEN.2013.2247996

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title = "Ga2O3 nanowire photodetector prepared on SiO 2/Si template",

abstract = "The authors report the growth of β-Ga2O3 nanowires using a vapor phase transport method on SiO2/Si template. It is found that average diameter, average length, and density of the nanowires all increased as we increase the growth temperature. β-Ga2O 3 nanowire solar-blind photodetectors with a sharp cutoff at 255 nm are also fabricated. With an incident light wavelength of 255 nm and an applied bias of 5 V, it is found that measured responsivity of the photodetector prepared at 950 °C is 3.43 × 10?3 A/W.",

author = "Wu, {Y. L.} and Chang, {Shoou Jinn} and Weng, {W. Y.} and Liu, {C. H.} and Tsai, {T. Y.} and Hsu, {C. L.} and Chen, {K. C.}",

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doi = "10.1109/JSEN.2013.2247996",

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T1 - Ga2O3 nanowire photodetector prepared on SiO 2/Si template

AU - Wu, Y. L.

AU - Chang, Shoou Jinn

AU - Weng, W. Y.

AU - Liu, C. H.

AU - Tsai, T. Y.

AU - Hsu, C. L.

AU - Chen, K. C.

PY - 2013

Y1 - 2013

N2 - The authors report the growth of β-Ga2O3 nanowires using a vapor phase transport method on SiO2/Si template. It is found that average diameter, average length, and density of the nanowires all increased as we increase the growth temperature. β-Ga2O 3 nanowire solar-blind photodetectors with a sharp cutoff at 255 nm are also fabricated. With an incident light wavelength of 255 nm and an applied bias of 5 V, it is found that measured responsivity of the photodetector prepared at 950 °C is 3.43 × 10?3 A/W.

AB - The authors report the growth of β-Ga2O3 nanowires using a vapor phase transport method on SiO2/Si template. It is found that average diameter, average length, and density of the nanowires all increased as we increase the growth temperature. β-Ga2O 3 nanowire solar-blind photodetectors with a sharp cutoff at 255 nm are also fabricated. With an incident light wavelength of 255 nm and an applied bias of 5 V, it is found that measured responsivity of the photodetector prepared at 950 °C is 3.43 × 10?3 A/W.

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JF - IEEE Sensors Journal

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Ga₂O₃ nanowire photodetector prepared on SiO ₂/Si template

Abstract

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