Ga2O3 nanowire photodetector prepared on SiO 2/Si template

Y. L. Wu, Shoou-Jinn Chang, W. Y. Weng, C. H. Liu, T. Y. Tsai, C. L. Hsu, K. C. Chen

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)


The authors report the growth of β-Ga2O3 nanowires using a vapor phase transport method on SiO2/Si template. It is found that average diameter, average length, and density of the nanowires all increased as we increase the growth temperature. β-Ga2O 3 nanowire solar-blind photodetectors with a sharp cutoff at 255 nm are also fabricated. With an incident light wavelength of 255 nm and an applied bias of 5 V, it is found that measured responsivity of the photodetector prepared at 950 °C is 3.43 × 10?3 A/W.

Original languageEnglish
Article number6466350
Pages (from-to)2368-2373
Number of pages6
JournalIEEE Sensors Journal
Issue number6
Publication statusPublished - 2013 May 23

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

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