Ga+ focused-ion-beam implantation-induced masking for H 2 etching of ZnO films

Hsin Chiao Fang, Jun Han Huang, Wen Huei Chu, Chuan-Pu Liu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Gallium implantation of ZnO by a focused-ion beam is used to create a mask for ZnO dry etching with hydrogen. Effects of Ga+ fluence on the etch stop properties and the associated mechanisms are investigated. The fluence of 2.8 × 1016 cm-2 is determined to be optimum to render the best mask quality. While lower fluences would cause less etching selectivity, higher fluences would cause erosion of the surface and particles to be precipitated on the surface after H2 treatment at high temperature. In contrast to the commonly adopted gallium oxide formation on Si, transmission electron microscopy analysis reveals that, for the fluences ≤2.8 × 1016 cm-2, Ga+ ions are incorporated as dopants into ZnO without any second phases or precipitates, indicating the Ga-doped ZnO layer behaves as a mask for H2 etching due to the higher electronegativity of Ga+ towards oxygen. However, for the fluences ≥4.6 × 1016 cm-2, the surface particles are responsible for the etch stop and are identified as ZnGa2O 4. We finally demonstrate a complicated pattern of 'NCKU' on ZnO by using this technique. The study not only helps clarify the related mechanisms, but also suggests a feasible extension of the etch stop process that can be applied to more functional material.

Original languageEnglish
Article number505703
JournalNanotechnology
Volume21
Issue number50
DOIs
Publication statusPublished - 2010 Dec 17

Fingerprint

Focused ion beams
Masks
Etching
Gallium
Electronegativity
Dry etching
Functional materials
Precipitates
Hydrogen
Erosion
Doping (additives)
Ions
Oxygen
Transmission electron microscopy
Oxides
Temperature

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Fang, Hsin Chiao ; Huang, Jun Han ; Chu, Wen Huei ; Liu, Chuan-Pu. / Ga+ focused-ion-beam implantation-induced masking for H 2 etching of ZnO films. In: Nanotechnology. 2010 ; Vol. 21, No. 50.
@article{89a6da01ddf14f4b8949f939ff8ca50d,
title = "Ga+ focused-ion-beam implantation-induced masking for H 2 etching of ZnO films",
abstract = "Gallium implantation of ZnO by a focused-ion beam is used to create a mask for ZnO dry etching with hydrogen. Effects of Ga+ fluence on the etch stop properties and the associated mechanisms are investigated. The fluence of 2.8 × 1016 cm-2 is determined to be optimum to render the best mask quality. While lower fluences would cause less etching selectivity, higher fluences would cause erosion of the surface and particles to be precipitated on the surface after H2 treatment at high temperature. In contrast to the commonly adopted gallium oxide formation on Si, transmission electron microscopy analysis reveals that, for the fluences ≤2.8 × 1016 cm-2, Ga+ ions are incorporated as dopants into ZnO without any second phases or precipitates, indicating the Ga-doped ZnO layer behaves as a mask for H2 etching due to the higher electronegativity of Ga+ towards oxygen. However, for the fluences ≥4.6 × 1016 cm-2, the surface particles are responsible for the etch stop and are identified as ZnGa2O 4. We finally demonstrate a complicated pattern of 'NCKU' on ZnO by using this technique. The study not only helps clarify the related mechanisms, but also suggests a feasible extension of the etch stop process that can be applied to more functional material.",
author = "Fang, {Hsin Chiao} and Huang, {Jun Han} and Chu, {Wen Huei} and Chuan-Pu Liu",
year = "2010",
month = "12",
day = "17",
doi = "10.1088/0957-4484/21/50/505703",
language = "English",
volume = "21",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "50",

}

Ga+ focused-ion-beam implantation-induced masking for H 2 etching of ZnO films. / Fang, Hsin Chiao; Huang, Jun Han; Chu, Wen Huei; Liu, Chuan-Pu.

In: Nanotechnology, Vol. 21, No. 50, 505703, 17.12.2010.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ga+ focused-ion-beam implantation-induced masking for H 2 etching of ZnO films

AU - Fang, Hsin Chiao

AU - Huang, Jun Han

AU - Chu, Wen Huei

AU - Liu, Chuan-Pu

PY - 2010/12/17

Y1 - 2010/12/17

N2 - Gallium implantation of ZnO by a focused-ion beam is used to create a mask for ZnO dry etching with hydrogen. Effects of Ga+ fluence on the etch stop properties and the associated mechanisms are investigated. The fluence of 2.8 × 1016 cm-2 is determined to be optimum to render the best mask quality. While lower fluences would cause less etching selectivity, higher fluences would cause erosion of the surface and particles to be precipitated on the surface after H2 treatment at high temperature. In contrast to the commonly adopted gallium oxide formation on Si, transmission electron microscopy analysis reveals that, for the fluences ≤2.8 × 1016 cm-2, Ga+ ions are incorporated as dopants into ZnO without any second phases or precipitates, indicating the Ga-doped ZnO layer behaves as a mask for H2 etching due to the higher electronegativity of Ga+ towards oxygen. However, for the fluences ≥4.6 × 1016 cm-2, the surface particles are responsible for the etch stop and are identified as ZnGa2O 4. We finally demonstrate a complicated pattern of 'NCKU' on ZnO by using this technique. The study not only helps clarify the related mechanisms, but also suggests a feasible extension of the etch stop process that can be applied to more functional material.

AB - Gallium implantation of ZnO by a focused-ion beam is used to create a mask for ZnO dry etching with hydrogen. Effects of Ga+ fluence on the etch stop properties and the associated mechanisms are investigated. The fluence of 2.8 × 1016 cm-2 is determined to be optimum to render the best mask quality. While lower fluences would cause less etching selectivity, higher fluences would cause erosion of the surface and particles to be precipitated on the surface after H2 treatment at high temperature. In contrast to the commonly adopted gallium oxide formation on Si, transmission electron microscopy analysis reveals that, for the fluences ≤2.8 × 1016 cm-2, Ga+ ions are incorporated as dopants into ZnO without any second phases or precipitates, indicating the Ga-doped ZnO layer behaves as a mask for H2 etching due to the higher electronegativity of Ga+ towards oxygen. However, for the fluences ≥4.6 × 1016 cm-2, the surface particles are responsible for the etch stop and are identified as ZnGa2O 4. We finally demonstrate a complicated pattern of 'NCKU' on ZnO by using this technique. The study not only helps clarify the related mechanisms, but also suggests a feasible extension of the etch stop process that can be applied to more functional material.

UR - http://www.scopus.com/inward/record.url?scp=78650121775&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650121775&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/21/50/505703

DO - 10.1088/0957-4484/21/50/505703

M3 - Article

VL - 21

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 50

M1 - 505703

ER -