Gate-controlled surface conduction in Na-doped Bi 2Te 3 topological insulator nanoplates

Yong Wang, Faxian Xiu, Lina Cheng, Liang He, Murong Lang, Jianshi Tang, Xufeng Kou, Xinxin Yu, Xiaowei Jiang, Zhigang Chen, Jin Zou, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

115 Citations (Scopus)

Abstract

Exploring exciting and exotic physics, scientists are pursuing practical device applications for topological insulators. The Dirac-like surface states in topological insulators are protected by the time-reversal symmetry, which naturally forbids backscattering events during the carrier transport process, and therefore offers promising applications in dissipationless spintronic devices. Although considerable efforts have been devoted to controlling their surface conduction, limited work has been focused on tuning surface states and bulk carriers in Bi 2Te 3 nanostructures by external field. Here we report gate-tunable surface conduction in Na-doped Bi 2Te 3 topological insulator nanoplates. Significantly, by applying external gate voltages, such topological insulators can be tuned from p-type to n-type. Our results render a promise in finding novel topological insulators with enhanced surface states.

Original languageEnglish
Pages (from-to)1170-1175
Number of pages6
JournalNano letters
Volume12
Issue number3
DOIs
Publication statusPublished - 2012 Mar 14

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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