Gate current dependent hot-carrier-induced degradation in LDMOS transistors

J. F. Chen; K. S. Tian; S. Y. Chen; J. R. Lee; K. M. Wu; T. Y. Huang; C. M. Liu

doi:10.1049/el:20080520

Gate current dependent hot-carrier-induced degradation in LDMOS transistors

J. F. Chen, K. S. Tian, S. Y. Chen, J. R. Lee, K. M. Wu, T. Y. Huang, C. M. Liu

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Hot-carrier-induced degradation in an n-type lateral diffused metal-oxide-semiconductor (LDMOS) transistor is investigated. Based on experimental data and technology computer-aided-design simulations, hot-electron injection in the channel region is identified to be the driving force of device degradation. Since gate current (I_g) consists mainly of electron injection, I_g is found to correlate with device degradation well. Such I_g dependent device degradation suggests that I_g should be examined in evaluating the hot-carrier reliability of LDMOS transistors.

Original language	English
Journal	Electronics Letters
Volume	44
Issue number	16
DOIs	https://doi.org/10.1049/el:20080520
Publication status	Published - 2008 Aug 15

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20080520

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title = "Gate current dependent hot-carrier-induced degradation in LDMOS transistors",

abstract = "Hot-carrier-induced degradation in an n-type lateral diffused metal-oxide-semiconductor (LDMOS) transistor is investigated. Based on experimental data and technology computer-aided-design simulations, hot-electron injection in the channel region is identified to be the driving force of device degradation. Since gate current (Ig) consists mainly of electron injection, Ig is found to correlate with device degradation well. Such Ig dependent device degradation suggests that Ig should be examined in evaluating the hot-carrier reliability of LDMOS transistors.",

author = "Chen, {J. F.} and Tian, {K. S.} and Chen, {S. Y.} and Lee, {J. R.} and Wu, {K. M.} and Huang, {T. Y.} and Liu, {C. M.}",

year = "2008",

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language = "English",

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T1 - Gate current dependent hot-carrier-induced degradation in LDMOS transistors

AU - Chen, J. F.

AU - Tian, K. S.

AU - Chen, S. Y.

AU - Lee, J. R.

AU - Wu, K. M.

AU - Huang, T. Y.

AU - Liu, C. M.

PY - 2008/8/15

Y1 - 2008/8/15

N2 - Hot-carrier-induced degradation in an n-type lateral diffused metal-oxide-semiconductor (LDMOS) transistor is investigated. Based on experimental data and technology computer-aided-design simulations, hot-electron injection in the channel region is identified to be the driving force of device degradation. Since gate current (Ig) consists mainly of electron injection, Ig is found to correlate with device degradation well. Such Ig dependent device degradation suggests that Ig should be examined in evaluating the hot-carrier reliability of LDMOS transistors.

AB - Hot-carrier-induced degradation in an n-type lateral diffused metal-oxide-semiconductor (LDMOS) transistor is investigated. Based on experimental data and technology computer-aided-design simulations, hot-electron injection in the channel region is identified to be the driving force of device degradation. Since gate current (Ig) consists mainly of electron injection, Ig is found to correlate with device degradation well. Such Ig dependent device degradation suggests that Ig should be examined in evaluating the hot-carrier reliability of LDMOS transistors.

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SN - 0013-5194

VL - 44

JO - Electronics Letters

JF - Electronics Letters

IS - 16

ER -

Gate current dependent hot-carrier-induced degradation in LDMOS transistors

Abstract

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