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Gate current dependent hot-carrier-induced degradation in LDMOS transistors
J. F. Chen
, K. S. Tian
, S. Y. Chen
, J. R. Lee
, K. M. Wu
, T. Y. Huang
, C. M. Liu
Institute of Microelectronics
Master Degree Program on Nano-Integrated-Circuit Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
11
Citations (Scopus)
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Keyphrases
Metal-oxide-semiconductor Transistor
100%
Gate Current
100%
Hot-carrier-induced Degradation
100%
Device Degradation
100%
Hot Electron Injection
33%
Technology Computer-aided Design Simulation
33%
Electron Injection
33%
Hot Carrier Reliability
33%
Material Science
Metal Oxide
100%
Transistor
100%
Oxide Semiconductor
100%
Hot Carrier
100%
Hot Electron
33%
Engineering
Metal Oxide Semiconductor
100%
Induced Degradation
100%
Electron Injection
66%
Computer Aided Design
33%
Hot Electron
33%
Driving Force
33%
Channel Region
33%