This brief develops a novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver with short rising and falling times. The driving capability of the a-Si:H device is improved owing to the enlarged gate voltages by the two-step-bootstrapping structure of the proposed gate driver. The measured rising time, falling time, and voltage swing of the output waveform are 2.05μ s, 1.31 μ s, and 27.1 V, respectively, after an accelerated lifetime test at 70 °C for 120 h.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering