Gate driver based on a-Si:H thin-film transistors with two-step-bootstrapping structure for high-resolution and high-frame-rate displays

Chih Lung Lin, Fu Hsing Chen, Ming Xun Wang, Po Cheng Lai, Chin Hsien Tseng

Research output: Contribution to journalArticle

11 Citations (Scopus)


This brief develops a novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver with short rising and falling times. The driving capability of the a-Si:H device is improved owing to the enlarged gate voltages by the two-step-bootstrapping structure of the proposed gate driver. The measured rising time, falling time, and voltage swing of the output waveform are 2.05μ s, 1.31 μ s, and 27.1 V, respectively, after an accelerated lifetime test at 70 °C for 120 h.

Original languageEnglish
Article number7947093
Pages (from-to)3494-3497
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number8
Publication statusPublished - 2017 Aug


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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