Gate driver based on a-Si:H thin-film transistors with two-step-bootstrapping structure for high-resolution and high-frame-rate displays

Chih Lung Lin, Fu Hsing Chen, Ming Xun Wang, Po Cheng Lai, Chin Hsien Tseng

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

This brief develops a novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver with short rising and falling times. The driving capability of the a-Si:H device is improved owing to the enlarged gate voltages by the two-step-bootstrapping structure of the proposed gate driver. The measured rising time, falling time, and voltage swing of the output waveform are 2.05μ s, 1.31 μ s, and 27.1 V, respectively, after an accelerated lifetime test at 70 °C for 120 h.

Original languageEnglish
Article number7947093
Pages (from-to)3494-3497
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume64
Issue number8
DOIs
Publication statusPublished - 2017 Aug

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Thin film transistors
Display devices
Electric potential
Amorphous silicon

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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Gate driver based on a-Si:H thin-film transistors with two-step-bootstrapping structure for high-resolution and high-frame-rate displays. / Lin, Chih Lung; Chen, Fu Hsing; Wang, Ming Xun; Lai, Po Cheng; Tseng, Chin Hsien.

In: IEEE Transactions on Electron Devices, Vol. 64, No. 8, 7947093, 08.2017, p. 3494-3497.

Research output: Contribution to journalArticle

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AU - Tseng, Chin Hsien

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