Gate driver based on a-Si:H thin-film transistors with two-step-bootstrapping structure for high-resolution and high-frame-rate displays

Chih Lung Lin; Fu Hsing Chen; Ming Xun Wang; Po Cheng Lai; Chin Hsien Tseng

doi:10.1109/TED.2017.2710180

Gate driver based on a-Si:H thin-film transistors with two-step-bootstrapping structure for high-resolution and high-frame-rate displays

Chih Lung Lin
, Fu Hsing Chen
, Ming Xun Wang
, Po Cheng Lai
, Chin Hsien Tseng

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

This brief develops a novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver with short rising and falling times. The driving capability of the a-Si:H device is improved owing to the enlarged gate voltages by the two-step-bootstrapping structure of the proposed gate driver. The measured rising time, falling time, and voltage swing of the output waveform are 2.05μ s, 1.31 μ s, and 27.1 V, respectively, after an accelerated lifetime test at 70 °C for 120 h.

Original language	English
Article number	7947093
Pages (from-to)	3494-3497
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	8
DOIs	https://doi.org/10.1109/TED.2017.2710180
Publication status	Published - 2017 Aug

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2017.2710180

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title = "Gate driver based on a-Si:H thin-film transistors with two-step-bootstrapping structure for high-resolution and high-frame-rate displays",

abstract = "This brief develops a novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver with short rising and falling times. The driving capability of the a-Si:H device is improved owing to the enlarged gate voltages by the two-step-bootstrapping structure of the proposed gate driver. The measured rising time, falling time, and voltage swing of the output waveform are 2.05μ s, 1.31 μ s, and 27.1 V, respectively, after an accelerated lifetime test at 70 °C for 120 h.",

author = "Lin, \{Chih Lung\} and Chen, \{Fu Hsing\} and Wang, \{Ming Xun\} and Lai, \{Po Cheng\} and Tseng, \{Chin Hsien\}",

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year = "2017",

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AU - Lin, Chih Lung

AU - Chen, Fu Hsing

AU - Wang, Ming Xun

AU - Lai, Po Cheng

AU - Tseng, Chin Hsien

PY - 2017/8

Y1 - 2017/8

N2 - This brief develops a novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver with short rising and falling times. The driving capability of the a-Si:H device is improved owing to the enlarged gate voltages by the two-step-bootstrapping structure of the proposed gate driver. The measured rising time, falling time, and voltage swing of the output waveform are 2.05μ s, 1.31 μ s, and 27.1 V, respectively, after an accelerated lifetime test at 70 °C for 120 h.

AB - This brief develops a novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver with short rising and falling times. The driving capability of the a-Si:H device is improved owing to the enlarged gate voltages by the two-step-bootstrapping structure of the proposed gate driver. The measured rising time, falling time, and voltage swing of the output waveform are 2.05μ s, 1.31 μ s, and 27.1 V, respectively, after an accelerated lifetime test at 70 °C for 120 h.

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ER -

Gate driver based on a-Si:H thin-film transistors with two-step-bootstrapping structure for high-resolution and high-frame-rate displays

Abstract

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