Gate-first low vt Al/TaN/Ir/HfLaO p-mosfet using simple laser annealing

N. C. Su, C. H. Wu, M. F. Chang, J. Z. Huang, Shui-Jinn Wang, W. C. Lee, P. T. Lee, H. L. Kao, Albert Chin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Using excimer laser annealing and laser-reflective Al-covered gate, the self-aligned, gate-dielectric first and gate-electrode first Al/TaN/Ir/HfLaO p-MOSFET showed low threshold voltage (Vt) of -0.07 V and good peak hole mobility of 86 cm2/V-s at 1.5 nm equivalent-oxide thickness (EOT).

Original languageEnglish
Title of host publication66th DRC Device Research Conference Digest, DRC 2008
Pages71-72
Number of pages2
DOIs
Publication statusPublished - 2008 Dec 1
Event66th DRC Device Research Conference Digest, DRC 2008 - Santa Barbara, CA, United States
Duration: 2008 Jun 232008 Jun 25

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other66th DRC Device Research Conference Digest, DRC 2008
CountryUnited States
CitySanta Barbara, CA
Period08-06-2308-06-25

Fingerprint

Hole mobility
Gate dielectrics
Excimer lasers
Threshold voltage
Annealing
Electrodes
Oxides
Lasers

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Su, N. C., Wu, C. H., Chang, M. F., Huang, J. Z., Wang, S-J., Lee, W. C., ... Chin, A. (2008). Gate-first low vt Al/TaN/Ir/HfLaO p-mosfet using simple laser annealing. In 66th DRC Device Research Conference Digest, DRC 2008 (pp. 71-72). [4800739] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2008.4800739
Su, N. C. ; Wu, C. H. ; Chang, M. F. ; Huang, J. Z. ; Wang, Shui-Jinn ; Lee, W. C. ; Lee, P. T. ; Kao, H. L. ; Chin, Albert. / Gate-first low vt Al/TaN/Ir/HfLaO p-mosfet using simple laser annealing. 66th DRC Device Research Conference Digest, DRC 2008. 2008. pp. 71-72 (Device Research Conference - Conference Digest, DRC).
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title = "Gate-first low vt Al/TaN/Ir/HfLaO p-mosfet using simple laser annealing",
abstract = "Using excimer laser annealing and laser-reflective Al-covered gate, the self-aligned, gate-dielectric first and gate-electrode first Al/TaN/Ir/HfLaO p-MOSFET showed low threshold voltage (Vt) of -0.07 V and good peak hole mobility of 86 cm2/V-s at 1.5 nm equivalent-oxide thickness (EOT).",
author = "Su, {N. C.} and Wu, {C. H.} and Chang, {M. F.} and Huang, {J. Z.} and Shui-Jinn Wang and Lee, {W. C.} and Lee, {P. T.} and Kao, {H. L.} and Albert Chin",
year = "2008",
month = "12",
day = "1",
doi = "10.1109/DRC.2008.4800739",
language = "English",
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series = "Device Research Conference - Conference Digest, DRC",
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Su, NC, Wu, CH, Chang, MF, Huang, JZ, Wang, S-J, Lee, WC, Lee, PT, Kao, HL & Chin, A 2008, Gate-first low vt Al/TaN/Ir/HfLaO p-mosfet using simple laser annealing. in 66th DRC Device Research Conference Digest, DRC 2008., 4800739, Device Research Conference - Conference Digest, DRC, pp. 71-72, 66th DRC Device Research Conference Digest, DRC 2008, Santa Barbara, CA, United States, 08-06-23. https://doi.org/10.1109/DRC.2008.4800739

Gate-first low vt Al/TaN/Ir/HfLaO p-mosfet using simple laser annealing. / Su, N. C.; Wu, C. H.; Chang, M. F.; Huang, J. Z.; Wang, Shui-Jinn; Lee, W. C.; Lee, P. T.; Kao, H. L.; Chin, Albert.

66th DRC Device Research Conference Digest, DRC 2008. 2008. p. 71-72 4800739 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Gate-first low vt Al/TaN/Ir/HfLaO p-mosfet using simple laser annealing

AU - Su, N. C.

AU - Wu, C. H.

AU - Chang, M. F.

AU - Huang, J. Z.

AU - Wang, Shui-Jinn

AU - Lee, W. C.

AU - Lee, P. T.

AU - Kao, H. L.

AU - Chin, Albert

PY - 2008/12/1

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N2 - Using excimer laser annealing and laser-reflective Al-covered gate, the self-aligned, gate-dielectric first and gate-electrode first Al/TaN/Ir/HfLaO p-MOSFET showed low threshold voltage (Vt) of -0.07 V and good peak hole mobility of 86 cm2/V-s at 1.5 nm equivalent-oxide thickness (EOT).

AB - Using excimer laser annealing and laser-reflective Al-covered gate, the self-aligned, gate-dielectric first and gate-electrode first Al/TaN/Ir/HfLaO p-MOSFET showed low threshold voltage (Vt) of -0.07 V and good peak hole mobility of 86 cm2/V-s at 1.5 nm equivalent-oxide thickness (EOT).

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Su NC, Wu CH, Chang MF, Huang JZ, Wang S-J, Lee WC et al. Gate-first low vt Al/TaN/Ir/HfLaO p-mosfet using simple laser annealing. In 66th DRC Device Research Conference Digest, DRC 2008. 2008. p. 71-72. 4800739. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2008.4800739