Gate oxide wear out using novel polysilazane-base inorganic as nano-scaling shallow trench filling

Ching Yuan Ho, Kai Yao Shih, Jr Hau He

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The phenomenon of floating gate (FG) crystallization and extrinsic gate oxide breakdown (Vbd) are discussed using polysilazane-base inorganic material SOD (Spin-On-Dielectric) as shallow trench isolation (STI) filling for 50 nm flash memory fabrication. The pinholes are found along the FG grain boundary in wide active regions because of tensile stress induced by SOD material in STI process, thus gate oxide wears out by following wet cleaning steps. The chemical oxide formation during FG deposition can effectively inhibit gate oxide early breakdown. Moreover, FG sheet resistance (Rs) in 550 °C/air deposition condition can significantly reduce about 20% in comparison with 520 °C/O2 and 400 °C/N2 conditions.

Original languageEnglish
Pages (from-to)580-583
Number of pages4
JournalMicroelectronic Engineering
Volume87
Issue number4
DOIs
Publication statusPublished - 2010 Apr 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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